Semiconductor device with air gaps and method for fabricating the same
A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.
1. A method for fabricating a semiconductor device, comprising:
forming a plurality of bit line structures over a substrate;
forming contact holes between the bit line structures;
forming sacrificial spacers on sidewalls of the contact holes;
forming first plugs recessed inside the contact holes;
forming air gaps by removing the sacrificial spacers;
forming conductive capping layers on the first plugs and the air gaps to cover the first plugs and the air gaps; and
forming second plugs over the conductive capping layers,
wherein the conductive capping layers are formed directly from surfaces of the first plugs through an epitaxial growth process.
2. The method of claim 1 , wherein the conductive capping layers are formed by performing an epitaxial growth process on silicon.
3. The method of claim 1 , wherein the first plugs include polysilicon layers, and the conductive capping layers are formed from surfaces of the first plugs by performing a selective epitaxial growth process on silicon.
4. The method of claim 1 , wherein the forming of sacrificial spacers includes:
forming a sacrificial layer over the substrate including the contact holes; and
forming the sacrificial spacers by etching the sacrificial layer.
5. The method of claim 4 , wherein the sacrificial layer includes titanium nitride.
6. A method for fabricating a semiconductor device, comprising:
forming a plurality of bit line structures over a substrate;
forming first plugs between the bit line structures;
forming air gaps between the bit line structures and the first plugs;
forming conductive capping layers on the first plugs and the air gaps, wherein the conductive capping layers cover the first plugs and the air gaps; and
forming second plugs over the conductive capping layers,
wherein the first plugs include polysilicon layers, and the conductive capping layers are formed directly from surfaces of the first plugs by performing a selective epitaxial growth process on silicon.