Magnetoresistive memory and manufacturing method

1. A magnetoresistive memory comprising:

a select transistor comprising first and second diffusion layers in a semiconductor substrate, a gate insulating film on a surface of the semiconductor substrate between the first and second diffusion layers, and a gate electrode on the gate insulating film, the select transistor covered with a first interlayer insulating film on the semiconductor substrate;

first and second contact plugs in the first interlayer insulating film, the first contact plug electrically connected to the first diffusion layer, and the second contact plug electrically connected to the second diffusion layer;

a lower electrode on the first interlayer insulating film;

a magnetoresistive effect element on the lower electrode, the magnetoresistive effect element comprising a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and an intermediate layer between the first and second magnetic layers;

an upper electrode on the magnetoresistive effect element;

a first bit line electrically connected to the upper electrode; and

a second bit line electrically connected to the second contact plug,

wherein the lower electrode has a tapered cross-sectional shape in which a dimension of a bottom surface of the lower electrode is larger than a dimension of an upper surface of the lower electrode,

wherein the magnetoresistive effect element is provided at a position shifted from a position immediately above the first contact plug in a direction parallel to a surface of the semiconductor substrate, the shifted position of the magnetoresistive effect element is on an opposite side of the second contact plug side in a direction in which the first and second contacts plugs are arranged,

wherein the lower electrode includes a first portion provided immediately below the magnetoresistive effect element, and a second portion extending toward the first contact plug from the first portion,

wherein the first portion is not in direct contact with the first contact plug, the first portion includes a first side surface on the second contact plug side and a second side surface facing the first side surface, the second side surface is in contact with a second interlayer insulating film that covers the magnetoresistive effect element,

wherein the second portion is in contact with an upper surface of the first contact plug, the second portion that is in contact with the upper surface of the first contact plug is provided on the first side surface, and

wherein the second portion has a tapered angle formed between an inclined side surface of the second portion and a bottom surface of the second portion, the second portion has a predetermined length to connect the first portion to the first contact plug,

wherein the inclined side surface of the second portion is inclined in a whole region between a top side of the lower electrode and a bottom side of the lower electrode.

2. The magnetoresistive memory of claim 1 , wherein a distance between the second contact plug and the magnetoresistive effect element in a direction parallel to the surface of the semiconductor substrate is larger than a distance between the first contact plug and the second contact plug in a direction parallel to the surface of the semiconductor substrate.

3. The magnetoresistive memory of claim 1 , wherein a distance between the second contact plug and the magnetoresistive effect element in a direction parallel to the surface of the semiconductor substrate is smaller than a distance between the first contact plug and the second contact plug in a direction parallel to the surface of the semiconductor substrate.

4. The magnetoresistive memory of claim 1 , further comprising:

a third contact plug that is provided on the second contact plug and adjacent to the magnetoresistive effect element,

wherein a distance between the third contact plug and the magnetoresistive effect element in a direction parallel to the surface of the semiconductor substrate is larger than a distance between the first contact plug and the second contact plug in the direction parallel to the surface of the semiconductor substrate.

5. The magnetoresistive memory of claim 1 , wherein the magnetoresistive effect element has a tapered cross-sectional shape, and

a dimension of a bottom surface of the magnetoresistive effect element is larger than a dimension of an upper surface of the magnetoresistive effect element.

6. The magnetoresistive memory of claim 1 , wherein an angle formed between a straight line connecting an end portion of a bottom surface of the lower electrode with an end portion of an upper surface of the upper electrode and a direction vertical to the surface of the semiconductor substrate is greater than or equal to 30° and less than 90°.