Semiconductor apparatus

1. A method for manufacturing a semiconductor apparatus, said method comprising:

forming a semiconductor device on a principal surface of a substrate, said semiconductor device including an interconnect layer that comprises an inductor disposed in multilayers of the interconnect layer;

forming a buffer film which covers said semiconductor device and prevents diffusion of a magnetic material that covers the inductor; and

forming a magnetic shielding film which covers said buffer film and comprises said magnetic material.

2. The method for manufacturing the semiconductor apparatus according to claim 1 , wherein said magnetic material comprises a ferrite material having a spinel-type crystal structure.

3. The method for manufacturing the semiconductor apparatus according to claim 2 , wherein the ferrite material comprises, as a main component, at least one oxide magnetic material of XFe 2 O 4 and Y 1-n Z n Fe 2 O 4 , where:

X comprises one chemical element selected from the group consisting of nickel (Ni), zinc (Zn), copper (Cu), cobalt (Co), manganese (Mn), and iron (Fe);

Y comprises one chemical element selected from the group consisting of Ni, Zn, Cu, Co, and Mn; and

Z comprises one chemical element selected from the group consisting of Ni, Zn, Cu, Co and Mn.

4. The method for manufacturing the semiconductor apparatus according to claim 2 , wherein said magnetic shielding film comprises a (311) crystal face oriented along a film-thickness direction thereof.

5. The method for manufacturing the semiconductor apparatus according to claim 2 , wherein said buffer film comprises a film comprising at least one chemical element selected from the group consisting of tungsten (W), tantalum (Ta), titanium (Ti), and ruthenium (Ru).

6. The method for manufacturing the semiconductor apparatus according to claim 2 , wherein said buffer film includes a nitride or an oxide film comprising at least one chemical element selected from the group consisting of W, Ta, Ti, and Ru.

7. The method for manufacturing the semiconductor apparatus according to claim 2 , wherein said buffer film comprises tantalum nitride (TaN) as a main component, and

wherein said magnetic shielding film comprises a (311) crystal face oriented along a film-thickness direction thereof.

8. The method for manufacturing the semiconductor apparatus according to claim 2 , wherein said buffer film comprises tantalum nitride (TaN) as a main component, and

wherein said magnetic shielding film has a (400) crystal face oriented along a film-thickness direction thereof.

9. The method for manufacturing the semiconductor apparatus according to claim 2 , wherein said buffer film comprises Ti as a main component, and

wherein said magnetic shielding film comprises at least one crystal face selected from the group consisting of a (111) crystal face, a (222) crystal face, and a (333) crystal face, as a crystal face oriented along a film-thickness direction thereof.

10. The method for manufacturing the semiconductor apparatus according to claim 1 , further comprising forming an insulating film covering said semiconductor device, after said semiconductor device is formed,

wherein said magnetic shielding film is formed to cover said insulating film.

11. The method for manufacturing the semiconductor apparatus according to claim 10 , further comprising etching said insulating film to form a concave or a convex region in said insulating film,

wherein said buffer film and said magnetic shielding film extend along faces of said concave or convex regions.

12. The method for manufacturing the Semiconductor apparatus according to claim 1 , further comprising forming an upper buffer film which continuously covers said magnetic shielding film.

13. The method for manufacturing the semiconductor apparatus according to claim 12 , wherein said semiconductor device includes a memory cell comprising said interconnect layer and includes a magnetoresistive device electrically coupled to said interconnect layer, and

wherein said magnetic shielding film is formed to cover at least a region in which said memory cell is formed.

14. The method for manufacturing the semiconductor apparatus according to claim 1 , wherein said magnetic shielding film is formed to selectively cover an upper surface of said semiconductor device.

15. The method for manufacturing the semiconductor apparatus according to claim 14 , wherein the inductor is embedded within the interconnect layer of said semiconductor device, and

wherein said magnetic shielding film is formed to cover at least a region in which said inductor is formed.

16. The method for manufacturing the semiconductor apparatus according to claim 14 , wherein an interconnect comprising said inductor is formed to include a spiral pattern, and

wherein said magnetic shielding film has a concave shape in a central region of said inductor.

17. The method for manufacturing the semiconductor apparatus according to claim 1 , wherein said buffer film and said magnetic shielding film are formed at a process temperature of equal to or lower than 400 degrees Centigrade.

18. The method for manufacturing the semiconductor apparatus according to claim 1 , wherein said magnetic shielding film comprises at least one crystal face selected from the group consisting of a (311) crystal face, a (400) crystal face, a (111) crystal face, a (222) crystal face, and a (333) crystal face, as a crystal face oriented along a film-thickness direction thereof.

19. The method for manufacturing the semiconductor apparatus according to claim 1 , wherein said magnetic shielding film has a concave shape in a central region of said inductor.