Compositionally graded heterojunction semiconductor device and method of making same
A compositionally graded semiconductor device and a method of making same are disclosed that provides an efficient p-type doping for wide bandgap semiconductors by exploiting electronic polarization within the crystalline lattice. The compositional graded semiconductor graded device includes a graded heterojunction interface that exhibits a 3D bound polarization-induced sheet charge that spreads in accordance with ρ π (z)=−∇·P(z), where ρ π (z) is a volume charge density in a polar (z) direction, and ∇ is a divergence operator, wherein the graded heterojunction interface is configured to exhibit substantially equivalent conductivities along both lateral and vertical directions relative to the graded heterojunction interface.
1. A compositionally graded semiconductor device comprising:
a graded heterojunction interface comprising a 3D net unbalanced bound polarization-induced sheet charge in every unit cell of a crystal that spreads in accordance with ρ π (z)=−∇·P(z) , where ρ π (z) is a volume charge density in a polar (z) direction, and ∇ is a divergence operator,
wherein the graded heterojunction interface comprises polarization-induced doping that provides for high conductivity p-type layers having a high density of holes and comprising a smooth spatial variation of a valence-band edge to exhibit substantially equivalent conductivities along both lateral and vertical directions relative to the graded heterojunction interface.
2. The device of claim 1 , wherein the compositionally graded heterojunction interface is non-abrupt.
3. The device of claim 1 , wherein the graded heterojunction interface is configured to exhibit high-conductivity p-type transport in both the lateral and vertical directions.
4. The device of claim 1 , wherein the graded heterojunction interface comprises a GaN to Al x Ga 1-x N graded heterojunction interface at an N-face along a [000 1 ] direction in which x is a mole fraction of Aluminum.
5. The device of claim 4 , wherein the mole fraction of Aluminum is between 0.1≦x≦0.4.
6. The device of claim 1 , wherein the graded heterojunction interface comprises a AlN to Al x Ga 1-x N graded heterojunction interface at an N-face along a [000 1 ] direction.
7. The device of claim 1 , wherein the graded heterojunction interface comprises a AlInGaN graded heterojunction interface at an N-face along a [000 1 ] direction.
8. The device of claim 1 , wherein the graded heterojunction interface is doped exhibits p-type characteristics.
9. The device of claim 1 , wherein the graded heterojunction interface is also doped with a p-type doping agent comprising Mg.
10. The device of claim 1 , wherein the graded heterojunction interface is configured to exhibit resistivities that decrease with temperature between 300 to 100 K.
11. The device of claim 1 , wherein the graded heterojunction interface is configured to be not prone to hole freezeout at 4 K.
12. The device of claim 1 , wherein the graded heterojunction interface is configured to hole mobility μ p ˜65 cm 2 /Vs at 30 K.
13. The device of claim 1 , wherein the graded heterojunction interface comprises III-V semiconductors.
14. The device of claim 1 , wherein the graded heterojunction interface comprises III-V nitride semiconductors.
15. The device of claim 1 , wherein the device comprises selected from the group consisting of a LED device, a pn diode device and a laser diode device.