Systems and methods for implementing magnetoelectric junctions

1. A DIOMEJ cell comprising:

a magnetoelectric junction, that itself comprises:

a ferromagnetic fixed layer;

a ferromagnetic, magnetically anisotropic, free layer; and

a dielectric layer interposed between said ferromagnetic fixed layer and ferromagnetic, magnetically anisotropic, free layer;

wherein the ferromagnetic fixed layer is magnetically polarized in a first direction;

wherein the ferromagnetic, magnetically anisotropic, free layer has a first easy axis that is substantially aligned with the first direction, such that the ferromagnetic, magnetically anisotropic, free layer can adopt a magnetic polarity that is either parallel with or antiparallel with the first direction; and

wherein the magnetoelectric junction is configured such that when a potential difference is applied across the magnetoelectric junction, the magnetic anisotropy of the ferromagnetic, magnetically anisotropic, free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, or the easy plane where there is no easy axis that is orthogonal to the first easy axis, as compared to the strength of the magnetic anisotropy along the first easy axis, is magnified or reduced for the duration of the application of the potential difference; and

a diode;

wherein the diode and the magnetoelectric junction are arranged in series.

2. The DIOMEJ cell of claim 1 , wherein the first direction coincides with an in-plane direction.

3. The DIOMEJ cell of claim 1 , wherein the first direction coincides with an out-of-plane direction.

4. The DIOMEJ cell of claim 1 , wherein the coercivity of the ferromagnetic, magnetically anisotropic, free layer is reduced when a potential difference is applied across the magnetoelectric junction.

5. The DIOMEJ cell of claim 4 , wherein the application of a first threshold potential difference across the ferromagnetic fixed layer and the ferromagnetic, magnetically anisotropic, free layer reduces the coercivity of the ferromagnetic, magnetically anisotropic, free layer to an extent where the strength of the magnetic field imposed by the ferromagnetic fixed layer is sufficient to magnetize the ferromagnetic, magnetically anisotropic, free layer.

6. The DIOMEJ cell of claim 5 , wherein the application of a second threshold potential difference that is greater in magnitude than the first threshold potential difference causes a spin-transfer torque current to flow through the magnetoelectric junction;

wherein the spin-transfer torque current magnetizes the ferromagnetic, magnetically anisotropic, free layer in a direction antiparallel with the first direction.

7. The DIOMEJ cell of claim 1 , wherein the ferromagnetic fixed layer comprises one of: iron, nickel, manganese, cobalt, FeCoB, FeGaB, FePd, and FePt.

8. The DIOMEJ cell of claim 1 , wherein the ferromagnetic, magnetically anisotropic, free layer comprises one of: iron, nickel, manganese, cobalt, FeCoB, FeGaB, FePd, and FePt.

9. The DIOMEJ cell of claim 1 , wherein the dielectric layer comprises one of: MgO and Al 2 O 3 .

10. The DIOMEJ cell of claim 1 , further comprising an externally applied magnetic field that is either parallel with or antiparallel with the magnetic polarization of the ferromagnetic fixed layer, wherein the externally applied magnetic field has a strength sufficient to magnetize the ferromagnetic, magnetically anisotropic, free layer when its coercivity is reduced with the application of a potential difference across the ferromagnetic fixed layer and the ferromagnetic free layer.

11. The DIOMEJ cell of claim 1 , further comprising a seed layer.

12. The DIOMEJ cell of claim 11 , wherein the seed layer comprises Tantalum.

13. The DIOMEJ cell of claim 1 , further comprising:

a second dielectric layer and a semi-fixed layer;

wherein the second dielectric layer is interposed between the ferromagnetic, magnetically anisotropic, free layer and the semi-fixed layer;

wherein the semi-fixed layer has a direction of magnetic polarization that is antiparallel with the direction of magnetic polarization of the ferromagnetic fixed layer; and

wherein, when a potential difference is applied across the magnetoelectric junction, the magnetic anisotropy of the semi-fixed layer is altered such that the relative strength of the magnetic anisotropy along a third easy axis that is orthogonal to the first easy axis, or the easy plane where there is no easy axis that is orthogonal to the first easy axis, as compared to the strength of the magnetic anisotropy along the first easy axis, is magnified or reduced for the duration of the application of a potential difference;

wherein the extent of this alteration is less than that of the ferromagnetic, magnetically anisotropic, free layer.

14. The DIOMEJ cell of claim 1 , wherein the application of a potential difference pulse that has a duration that coincides with half of the precessional period of the ferromagnetic, magnetically anisotropic, free layer, or an odd multiple thereof, inverts the direction of magnetic polarization of the magnetoelectric junction.

15. A magneto-electric random access memory, comprising:

an array of DIOMEJ cells;

wherein each DIOMEJ cell comprises:

a magnetoelectric junction, that itself comprises:

a ferromagnetic fixed layer;

a ferromagnetic, magnetically anisotropic, free layer; and

a dielectric layer interposed between said ferromagnetic fixed layer and ferromagnetic, magnetically anisotropic, free layer;

wherein the ferromagnetic fixed layer is magnetically polarized in a first direction;

wherein the ferromagnetic, magnetically anisotropic, free layer has a first easy axis that is substantially aligned with the first direction, such that the ferromagnetic, magnetically anisotropic, free layer can adopt a magnetic polarity that is either parallel with or antiparallel with the first direction; and

wherein the magnetoelectric junction is configured such that when a potential difference is applied across the magnetoelectric junction, the magnetic anisotropy of the ferromagnetic, magnetically anisotropic, free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, or the easy plane where there is no easy axis that is orthogonal to the first easy axis, as compared to the strength of the magnetic anisotropy along the first easy axis, is magnified or reduced for the duration of the application of the potential difference; and

a diode;

wherein the diode and the magnetoelectric junction are arranged in series;

a plurality of source lines; and

a plurality of bit lines;

wherein each DIOMEJ cell is electrically connected to a unique combination of a source line and a bit line, such that no other DIOMEJ cell is connected to the same bit line and the same source line; and

wherein a source line and a bit line can be used to establish a potential difference across a particular DIOMEJ cell.

16. The magneto-electric random access memory of claim 15 , wherein for at least one DIOMEJ cell, the first direction coincides with an in-plane direction.

17. The magneto-electric random access memory of claim 15 , wherein for at least one DIOMEJ cell, the first direction coincides with an out-of-plane direction.

18. The magneto-electric random access memory of claim 15 , wherein for at least one DIOMEJ cell, the application of a first threshold potential difference across the ferromagnetic fixed layer and the ferromagnetic, magnetically anisotropic, free layer reduces the coercivity of the ferromagnetic, magnetically anisotropic, free layer to an extent where the strength of the magnetic field imposed by the ferromagnetic fixed layer is sufficient to magnetize the ferromagnetic, magnetically anisotropic, free layer.

19. The magneto-electric random access memory of claim 18 , wherein, for the at least one DIOMEJ cell, the application of a second threshold potential difference that is greater in magnitude than the first threshold potential difference causes a spin-transfer torque current to flow through the magnetoelectric junction that magnetizes the ferromagnetic, magnetically anisotropic, free layer in a direction antiparallel with the first direction.

20. The magneto-electric random access memory of claim 15 , wherein for at least one DIOMEJ cell, the coercivity of the ferromagnetic, magnetically anisotropic, free layer is reduced when a potential difference is applied across the magnetoelectric junction.

21. The magneto-electric random access memory of claim 15 , wherein for at least one DIOMEJ cell, the application of a potential difference pulse that has a duration that coincides with half of the precessional period of the ferromagnetic, magnetically anisotropic, free layer, or an odd multiple thereof, inverts the direction of magnetic polarization of the magnetoelectric junction.