Semiconductor device including a first wiring having a bending portion a via
A first wiring ( 1 ) has a bending portion ( 2 ), a first wiring region ( 1 a ) extending from the bending portion ( 2 ) in the X direction, and a second wiring region ( 1 b ) extending from the bending portion ( 2 ) in the Y direction. A via ( 3 ) is formed under the wiring ( 1 ). The via ( 3 ) is formed so as not to overlap with a region of the bending portion ( 2 ) in the first wiring region ( 1 a ). The length of the via ( 3 ) in the X direction (x) is longer than the length thereof in the Y direction (y) and both ends of the via ( 3 ) in the Y direction overlap with both ends of the first wiring region ( 1 a ) in the Y direction.
1. A semiconductor device, comprising:
a first wiring;
a second wiring which is arranged under the first wiring; and
a first via which is formed between the first wiring and the second wiring and electrically connects the first wiring and the second wiring, wherein:
in a planar view, the first wiring comprises:
a bending portion;
a first wiring region extending from the bending portion in a first direction; and
a second wiring region extending from the bending portion in a second direction orthogonal to the first direction,
the bending portion, the first wiring region and the second wiring region are formed on a same layer,
in a planar view, the first via is formed in the first wiring region so as not to overlap with a region of the bending portion,
a length of the first via in the first direction is longer than a length of the first via in the second direction, and
both ends of the first via in the second direction are overlapped with both ends of the first wiring region in the second direction.
2. The semiconductor device of claim 1 , wherein
the second wiring passes through a portion under the bending portion.
3. The semiconductor device of claim 1 , wherein
both ends of the first via in the first direction have a circular arc shape expanding outward in a planar view.
4. A semiconductor device, comprising:
a first wiring;
a second wiring which is arranged under the first wiring; and
a first via which is formed between the first wiring and the second wiring and electrically connects the first wiring and the second wiring; and
a second via which is formed between the first wiring and the second wiring and electrically connects the first wiring and the second wiring, wherein:
in a planar view, the first wiring comprises:
a bending portion;
a first wiring region extending from the bending portion in a first direction; and
a second wiring region extending from the bending portion in a second direction orthogonal to the first direction,
in a planar view, the first via is formed in the first wiring region so as not to overlap with a region of the bending portion,
a length of the first via in the first direction is longer than a length of the first via in the second direction,
both ends of the first via in the second direction are overlapped with both ends of the first wiring region in the second direction, and
the second via is arranged so as to include the bending portion, a part of the first wiring region and a part of the second wiring region in a planar view.
5. The semiconductor device of claim 1 , wherein
a width of the first wiring in a planar view is smaller than a depth of the first wiring.
6. The semiconductor device of claim 4 , wherein:
in a planar view, the bending portion has at least one side other than two sides from which the first wiring region and the second wiring region extend, respectively, and
in a planar view, the at least one side is flush with a corresponding one side of the second via.
7. The semiconductor device of claim 4 , wherein:
in a planar view, the bending portion has a corner portion which is made by two sides of the bending portion other than two sides from which the first wiring region and the second wiring region extend, respectively, and
in a planar view, the corner portion is flush with a corresponding one corner of the second via.
8. The semiconductor device of claim 1 , wherein:
in a planar view, the first wiring fully covers the first via.
9. The semiconductor device of claim 4 , wherein:
in a planar view, the first wiring fully covers the first via and the second via.
10. The semiconductor device of claim 1 , wherein
in a planar view, the first wiring further comprises a third wiring region extending from the bending portion in the first direction and in an opposite side with respect to the bending portion.
11. The semiconductor device of claim 1 , wherein
in a planar view, the first wiring further comprises a fourth wiring region extending from the bending portion in the second direction and in an opposite side with respect to the bending portion.
12. The semiconductor device of claim 10 , wherein
in a planar view, the first wiring further comprises a fourth wiring region extending from the bending portion in the second direction and in an opposite side with respect to the bending portion.
13. The semiconductor device of claim 4 , wherein
the second wiring passes through a portion under the bending portion.
14. The semiconductor device of claim 4 , wherein
both ends of the first via in the first direction have a circular arc shape expanding outward in a planar view.
15. The semiconductor device of claim 4 , wherein
a width of the first wiring in a planar view is smaller than a depth of the first wiring.
16. The semiconductor device of claim 4 , wherein:
in a planar view, the first wiring fully covers the first via.
17. The semiconductor device of claim 4 , wherein
in a planar view, the first wiring further comprises a third wiring region extending from the bending portion in the first direction and in an opposite side with respect to the bending portion.
18. The semiconductor device of claim 4 , wherein
in a planar view, the first wiring further comprises a fourth wiring region extending from the bending portion in the second direction and in an opposite side with respect to the bending portion.
19. The semiconductor device of claim 17 , wherein
in a planar view, the first wiring further comprises a fourth wiring region extending from the bending portion in the second direction and in an opposite side with respect to the bending portion.