Acoustic wave device
An acoustic wave device includes: a first piezoelectric thin film resonator including a first lower electrode, a first upper electrode and a first piezoelectric film sandwiched between the first lower and upper electrodes; a decoupler film provided on the first upper electrode; and a second piezoelectric thin film resonator provided on the decoupler film and including a second lower electrode, a second upper electrode and a second piezoelectric film sandwiched between the second lower and upper electrodes, wherein the first piezoelectric film and the second piezoelectric film comprise aluminum nitride and include an element increasing a piezoelectric constant of the aluminum nitride.
1. An acoustic wave device comprising:
a substrate;
a first piezoelectric thin film resonator provided on the substrate and including a first lower electrode, a first upper electrode and a first piezoelectric film sandwiched between the first lower and upper electrodes;
a decoupler film provided on the first upper electrode; and
a second piezoelectric thin film resonator provided on the decoupler film and including a second lower electrode, a second upper electrode and a second piezoelectric film sandwiched between the second lower and upper electrodes,
wherein the first piezoelectric film and the second piezoelectric film comprise aluminum nitride and include an element increasing a piezoelectric constant of the aluminum nitride, and
wherein an amount of the element included in the first piezoelectric film is smaller than that of the element included in the second piezoelectric film.
2. The acoustic wave device of claim 1 , wherein the element includes one of scandium and erbium.
3. An acoustic wave device comprising:
a first piezoelectric thin film resonator including a first lower electrode, a first upper electrode and a first piezoelectric film sandwiched between the first lower and upper electrodes;
a decoupler film provided on the first upper electrode; and
a second piezoelectric thin film resonator provided on the decoupler film and including a second lower electrode, a second upper electrode and a second piezoelectric film sandwiched between the second lower and upper electrodes,
wherein the first upper electrode and the second lower electrode have thicknesses different from those of the first lower electrode and the second upper electrode.
4. The acoustic wave device of claim 3 , wherein the first upper electrode and the second lower electrode have thicknesses greater than those of the first lower electrode and the second upper electrode.
5. The acoustic wave device of claim 3 , wherein the decoupler film is a single-layered film.
6. The acoustic wave device of claim 3 , wherein the decoupler has an acoustic impedance higher than or equal to 5 Mrayl.
7. The acoustic wave device of claim 3 , wherein the decoupler film includes silicon oxide.
8. The acoustic wave device of claim 3 , wherein the first lower electrode, the first upper electrode, the second lower electrode, and the second upper electrode have acoustic impedances that are higher than or equal to 50 Mrayl and are lower than or equal to 120 Mrayl.
9. The acoustic wave device of claim 3 , wherein each of the first lower electrode, the first upper electrode, the second lower electrode, and the second upper electrode includes at least one of Ir, W, Ru, Rh, Mo, Pt, and Ta.
10. The acoustic wave device of claim 3 , further comprising a substrate provided so as to form a cavity between the first lower electrode and the substrate.