GaN on Si(100) substrate using epi-twist
A method of growing GaN material on a silicon substrate includes providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10° offset surface orientation and using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate. The single crystal stress managing layer includes rare earth oxide with a (110) crystal orientation and a cubic crystal structure. The method further includes epitaxially growing a single crystal buffer layer on the stress managing layer. The single crystal buffer layer includes rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer. Epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material having one of a (11-20) crystal orientation and a (0001) crystal orientation.
1. A method of growing GaN material on a silicon substrate comprising the steps of:
providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to 10° offset surface orientation;
using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate, the single crystal stress managing layer including rare earth oxide with a (110) crystal orientation and a cubic crystal structure;
epitaxially growing a single crystal buffer layer on the stress managing layer, the single crystal buffer layer including rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer; and
epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material having one of a (11-20) crystal orientation and a (0001) crystal orientation.
2. The method as claimed in claim 1 wherein the single crystal stress managing layer includes single crystal gadolinium oxide (Gd 2 O 3 ).
3. The method as claimed in claim 1 wherein the single crystal buffer layer includes single crystal erbium oxide (Er 2 O 3 ).
4. A method of growing GaN material on a silicon substrate comprising the steps of:
providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10° offset surface orientation;
using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate, the single crystal stress managing layer including single crystal gadolinium oxide (Gd 2 O 3 ) with a (110) crystal orientation with a cubic crystal structure and substantially crystal lattice matched to the surface of the silicon substrate;
epitaxially growing a single crystal buffer layer on the stress managing layer, the single crystal buffer layer including single crystal erbium oxide (Er 2 O 3 ) with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer; and
epitaxially growing a layer of single crystal GaN semiconductor material on the surface of the buffer, the GaN semiconductor material having one of a (11-20) crystal orientation and a (0001) crystal orientation.
5. GaN semiconductor material grown on a silicon substrate comprising:
a single crystal silicon substrate with a (100) surface orientation or a (100) with up to 10° offset surface orientation;
a single crystal stress managing layer positioned on the silicon substrate, the single crystal stress managing layer including rare earth oxide with a (110) crystal orientation and a cubic crystal structure;
a single crystal buffer positioned on the stress managing layer and including rare earth oxide with a (110) crystal orientation; and
a layer of single crystal GaN material positioned on the surface of the buffer and having one of a (11-20) crystal orientation and a (0001) crystal orientation.
6. The GaN semiconductor material grown on a silicon substrate as claimed in claim 5 wherein the single crystal stress managing layer includes single crystal gadolinium oxide (Gd 2 O 3 ).
7. The GaN semiconductor material grown on a silicon substrate as claimed in claim 5 wherein the single crystal buffer layer includes single crystal erbium oxide (Er 2 O 3 ).
8. GaN semiconductor material grown on a silicon substrate comprising:
a single crystal silicon substrate with a (100) orientation or a (100) with up to 10° offset orientation;
a single crystal stress managing layer positioned on the silicon substrate, the single crystal stress managing layer including single crystal gadolinium oxide (Gd 2 O 3 ) with a (110) crystal orientation and a cubic crystal structure substantially crystal lattice matched to the surface of the silicon substrate;
a single crystal buffer positioned on the stress managing layer and including single crystal erbium oxide (Er 2 O 3 ) with a (110) crystal orientation; and
a layer of single crystal GaN semiconductor material positioned on the surface of the buffer and having one of a (11-20) crystal orientation and a (0001) crystal orientation.