Compound semiconductor device and method of manufacturing the same
An AlGaN/GaN HEMT includes: a compound semiconductor layer; a source electrode and a drain electrode formed on an upper side of the compound semiconductor layer; and an Al—Si—N layer being a high-resistance layer disposed in a lower portion of at least one of the source electrode and the drain electrode and higher in an electric resistance value than the source electrode and the drain electrode.
1. A compound semiconductor device comprising:
a compound semiconductor layer;
a first electrode and a second electrode formed on an upper side of the compound semiconductor layer; and
a high-resistance layer disposed in a lower portion of the first electrode and higher in an electric resistance value than other portions of the first electrode; wherein
the high-resistance layer has a portion containing 80% Al or more.
2. A compound semiconductor device comprising:
a compound semiconductor layer;
a first electrode and a second electrode formed on an upper side of the compound semiconductor layer; and
a high-resistance layer disposed in a lower portion of the first electrode and higher in an electric resistance value than the other portions of the first electrode; wherein
in the high-resistance layer, an Al content ratio gradually decreases from a value equal to or higher than 80% from an electrode end distant from the second electrode toward an electrode end close to the second electrode.
3. A method of manufacturing a compound semiconductor device comprising:
forming a compound semiconductor layer; and
forming a first electrode and a second electrode on an upper side of the compound semiconductor layer; wherein
a high-resistance layer higher in an electric resistance value than the other portions of the first electrode is formed in a lower portion of the first electrode; and
the high-resistance layer has a portion containing 80% Al or more.
4. A method of manufacturing a compound semiconductor device comprising:
forming a compound semiconductor layer; and
forming a first electrode and a second electrode on an upper side of the compound semiconductor layer; wherein
a high-resistance layer higher in an electric resistance value than the other portions of the first electrode is formed in a lower portion of the first electrode; and
in the high-resistance layer, an Al content ratio gradually decreases from a value equal to or higher than 80% from an electrode end distant from the second electrode toward an electrode end close to the second electrode.
5. A power supply circuit comprising:
a transformer; and
a high-voltage circuit and a low-voltage circuit sandwiching the transformer, the high-voltage circuit comprising a transistor, the transistor comprising:
a compound semiconductor layer;
a first electrode and a second electrode formed on an upper side of the compound semiconductor layer; and
a high-resistance layer disposed in a lower portion of the first electrode and higher in an electric resistance value than the other portions of the first electrode; wherein
the high-resistance layer has a portion containing 80% Al or more.
6. The compound semiconductor device according to claim 1 , wherein the high-resistance layer contains an Al x —Si y —N z compound that satisfies
x+y+z= 1
and
0< x <1.
7. The compound semiconductor device according to claim 1 , the first electrode having a first electrode end and a second electrode end, the first electrode end being closer to the second electrode than the second electrode end, wherein the high-resistance layer is locally provided in the first electrode end.
8. The method of manufacturing the compound semiconductor device according to claim 3 , wherein the high-resistance layer contains an Al x —Si y —N z compound that satisfies
x+y+z= 1
and
0 <x <1.
9. The method of manufacturing the compound semiconductor device according to claim 3 , the first electrode having a first electrode end and a second electrode end, the first electrode end being closer to the second electrode than the second electrode end, wherein the high-resistance layer is locally provided in the first electrode end.
10. The power supply circuit of claim 5 , wherein in the high-resistance layer, an Al content ratio gradually decreases from a value equal to or higher than 80% from an electrode end distant from the second electrode toward an electrode end close to the second electrode.
11. The power supply circuit of claim 10 , wherein the compound semiconductor layer comprises a material layer selected from the group consisting of AlN, AlGaN, and GaN.
12. The power supply circuit of claim 10 , wherein the high-resistance layer contains an Al x —Si y —N z compound that satisfies
x+y+z= 1
and
0< x <1.
13. The power supply circuit of claim 10 , the first electrode having a first electrode end and a second electrode end, the first electrode end being closer to the second electrode than the second electrode end, wherein the high-resistance layer is locally provided in the first electrode end.
14. The compound semiconductor device according to claim 1 , wherein the compound semiconductor layer comprises a material layer selected from the group consisting of AlN, AlGaN, and GaN.
15. The compound semiconductor device according to claim 2 , wherein the compound semiconductor layer comprises a material layer selected from the group consisting of AlN, AlGaN, and GaN.
16. The compound semiconductor device according to claim 2 , wherein the high-resistance layer contains an Al x —Si y —N z compound that satisfies
x+y+z= 1
and
0< x <1.
17. The compound semiconductor device according to claim 2 , the first electrode having a first electrode end and a second electrode end, the first electrode end being closer to the second electrode than the second electrode end, wherein the high-resistance layer is locally provided in the first electrode end.
18. The method of manufacturing the compound semiconductor device according to claim 3 , wherein the compound semiconductor layer comprises a material layer selected from the group consisting of AlN, AlGaN, and GaN.
19. The method of manufacturing the compound semiconductor device according to claim 4 , wherein the compound semiconductor layer comprises a material layer selected from the group consisting of AlN, AlGaN, and GaN.
20. The method of manufacturing the compound semiconductor device according to claim 4 , wherein the high-resistance layer contains an Al x —Si y —N z compound that satisfies
x+y+z= 1
and
0< x <1.
21. The method of manufacturing the compound semiconductor device according to claim 4 , the first electrode having a first electrode end and a second electrode end, the first electrode end being closer to the second electrode than the second electrode end, wherein the high-resistance layer is locally provided in the first electrode end.