Magnetic device and method of manufacturing the same
A method of manufacturing a magnetic device includes forming a stack structure, the stack structure including a magnetic layer, and etching the stack structure by using an etching gas, the etching gas including at least 80% by volume of H 2 gas.
1. A magnetic device, comprising:
at least one magnetic resistive device on a substrate, the magnetic resistive device having sidewalls with a substantially vertical profile and layers stacked in a vertical direction,
wherein a height of the at least one magnetic resistive device is at least 1.5 times a width of the at least one magnetic resistive device.
2. The magnetic device as claimed in claim 1 , wherein:
the at least one magnetic resistive device includes a lower electrode, a magnetic structure, and an upper electrode, which are sequentially stacked in a vertical direction, and
each of the lower electrode, the magnetic structure, and the upper electrode has sidewalls with a substantially vertical profile.
3. The magnetic device as claimed in claim 2 , wherein:
the magnetic structure includes a non-volatile metal, and
entire sidewalls of each of the lower electrode, the magnetic structure, and the upper electrode extend along a normal to the substrate.
4. The magnetic device as claimed in claim 2 , wherein the magnetic structure includes a lower magnetic layer pattern, a tunneling barrier layer, and an upper magnetic layer pattern, which are sequentially stacked in the vertical direction.
5. The magnetic device as claimed in claim 2 , wherein the magnetic structure includes at least one of Co/Pd, Co/Pt, Co/Ni, Fe/Pd, Fe/Pt, MgO, PtMn, IrMn, a CoFe alloy, and a CoFeB alloy.
6. The magnetic device as claimed in claim 1 , wherein the height of the at least one magnetic resistive device is about 1.5 to about 4 times the width of the at least one magnetic resistive device.
7. The magnetic device as claimed in claim 1 , wherein the at least one magnetic resistive device includes at least one of Co/Pd, Co/Pt, Co/Ni, Fe/Pd, and Fe/Pt.
8. The magnetic device as claimed in claim 1 , wherein the at least one magnetic resistive device includes a synthetic anti-ferromagnet structure.
9. The magnetic device as claimed in claim 1 , wherein the sidewalls of the entire magnetic resistive device have a vertical profile, the sidewall including no etching residuals thereon.
10. The magnetic device as claimed in claim 3 , wherein the magnetic structure includes no non-volatile metal re-deposits on the vertical sidewalls of the non-volatile metal in the magnetic structure.
11. A method of manufacturing a magnetic device, the method comprising:
forming a stack structure, the stack structure including a magnetic resistive device with a non-volatile metal layer, the magnetic resistive device having sidewalls with a substantially vertical profile and layers stacked in a vertical direction; and
etching the stack structure, including the non-volatile metal layer, with an etching gas including at least 80% by volume of H 2 gas,
wherein a height of the at least one magnetic resistive device is at least 1.5 times a width of the at least one magnetic resistive device.
12. The method as claimed in claim 11 , wherein etching the stack structure includes using an etching gas including the H 2 gas and an additional gas including an inert gas and/or NH 3 gas.
13. The method as claimed in claim 11 , wherein etching the stack structure includes performing a plasma etching process.
14. The method as claimed in claim 13 , further comprising, before etching the stack structure, exposing a region of the stack structure to hydrogen plasma.