Semiconductor device and manufacturing method thereof
View Patent ↗As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.
1. A light emitting device comprising:
a first electrode;
an insulating film covering an end portion of the first electrode;
a layer containing an organic compound over the first electrode; and
a second electrode over the layer containing the organic compound,
wherein the insulating film is a single layer,
wherein the insulating film has a cross-sectional shape,
wherein the cross-sectional shape comprises a first curved line, a second curved line, and a third curved line interposed between the first curved line and the second-curved line,
wherein the third curved line has a first center of curvature located outside the cross-sectional shape, and
wherein a thickness of the insulating film at the first curved line is larger than a thickness of the insulating film at the end portion of the first electrode.
2. The light emitting device according to claim 1 , wherein a thickness of a portion including the first curved line is larger than a thickness of a portion including the second curved line.
3. The light emitting device according to claim 1 ,
wherein the first curved line has a second center of curvature located inside the insulating film, and
wherein the second curved line has a third center of curvature located inside the insulating film.
4. The light emitting device according to claim 1 ,
wherein the first curved line has a second center of curvature located under the first curved line, and
wherein the second curved line has a third center of curvature located under the second curved line.
5. The light emitting device according to claim 1 , wherein the layer containing the organic compound is not provided over a portion including the first curved line.
6. The light emitting device according to claim 1 , wherein the highest portion of the insulating film is higher than the highest portion of the layer containing the organic compound.
7. The light emitting device according to claim 1 , wherein the insulating film is a partition.
8. The light emitting device according to claim 1 , wherein the insulating film is a photosensitive resin film.
9. The light emitting device according to claim 1 , further comprising a contact hall filled with the insulating film.
10. The light emitting device according to claim 1 , further comprising two transistor in one pixel.
11. The light emitting device according to claim 1 , further comprising a transistor electrically connected to the first electrode,
wherein a portion including the first curved line does not overlap with a channel formation region of the transistor.
12. A light emitting device comprising:
a first electrode;
an insulating film covering an end portion of the first electrode;
a layer containing an organic compound over the first electrode; and
a second electrode over the layer containing the organic compound,
wherein the insulating film is a single layer,
wherein the insulating film comprises a first portion, a second portion, and a third portion interposed between the first portion and the second portion,
wherein a top surface of the third portion is curved,
wherein the first portion comprises a first curved surface,
wherein the second portion comprises a second curved surface,
wherein the insulating film comprises a third curved surface having a first center of curvature located outside the insulating film,
wherein the third curved surface is provided between the first portion and the third portion, and
wherein a thickness of the insulating film at the third portion is larger than a thickness of the insulating film at the end portion of the first electrode.
13. The light emitting device according to claim 12 ,
wherein the thickness of the third portion is larger than a thickness of the second portion, and
wherein the layer containing the organic compound covers an end portion of the insulating film at the second portion.
14. The light emitting device according to claim 12 ,
wherein the first curved surface has a second center of curvature located inside the insulating film, and
wherein the second curved surface has a third center of curvature located inside the insulating film.
15. The light emitting device according to claim 12 , wherein the layer containing the organic compound is not provided over the top surface of the third portion.
16. The light emitting device according to claim 12 , wherein the highest portion of the insulating film is higher than the highest portion of the layer containing the organic compound.
17. The light emitting device according to claim 12 , wherein the insulating film is a partition.
18. The light emitting device according to claim 12 , wherein the insulating film is a photosensitive resin film.
19. The light emitting device according to claim 12 , further comprising a contact hall filled with the insulating film.
20. The light emitting device according to claim 12 , further comprising two transistor in one pixel.
21. The light emitting device according to claim 12 , further comprising a transistor electrically connected to the first electrode,
wherein the third portion does not overlap with a channel formation region of the transistor.
22. A light emitting device comprising:
a first electrode;
an insulating film covering an end portion of the first electrode;
a layer containing an organic compound over the first electrode; and
a second electrode over the layer containing the organic compound,
wherein the insulating film is a single layer,
wherein the insulating film comprises a first region, a second region, and a third region interposed between the first region and the second region,
wherein the third region comprises a protruding portion including a first curved surface,
wherein each of the first region and the second region comprises a second curved surface,
wherein the insulating film comprises a third curved surface having a first center of curvature located outside the insulating film,
wherein the third curved surface is provided between the third region and the first region, and
wherein a thickness of the protruding portion is larger than a thickness of the insulating film at the end portion of the first electrode.
23. The light emitting device according to claim 22 ,
wherein the thickness of the third region is larger than a thickness of the second region, and
wherein the layer containing the organic compound covers an end portion of the insulating film at the second region.
24. The light emitting device according to claim 22 ,
wherein the first curved surface has a second center of curvature located inside the insulating film, and
wherein the second curved surface has a third center of curvature located inside the insulating film.
25. The light emitting device according to claim 22 , wherein the layer containing the organic compound is not provided over the protruding portion.
26. The light emitting device according to claim 22 , wherein the highest portion of the insulating film is higher than the highest portion of the layer containing the organic compound.
27. The light emitting device according to claim 22 , wherein the insulating film is a partition.
28. The light emitting device according to claim 22 , wherein the insulating film is a photosensitive resin film.
29. The light emitting device according to claim 22 , further comprising a contact hall filled with the insulating film.
30. The light emitting device according to claim 22 , further comprising two transistor in one pixel.
31. The light emitting device according to claim 22 , further comprising a transistor electrically connected to the first electrode,
wherein the protruding portion does not overlap with a channel formation region of the transistor.