Plasma processor
The present invention relates to a plasma processor capable of regulating the temperature of the inner surface of the processing chamber efficiently and with excellent response, with a low-cost configuration. A plasma processor 1 includes a processing chamber 11 , a processing gas supply device 20 , an exhaust device 40 , coils 23 , a high-frequency power supply unit 24 , a heater 26 , a cooling device 30 , and a control device 50 . The cooling device 30 is configured with a cooling member 32 facing the processing chamber 11 at a distance therefrom, a cooling fluid supply section 31 for supplying cooling fluid into a cooling passage 32 a of the cooling member 32 and circulates it, and annular seal members 35 and 36 provided between the cooling member 32 and the processing chamber 11 . The exhaust device 40 reduces the pressure in a space S surrounded by the seal members 35 and 36 , the cooling member 32 , and the processing chamber 11 . The control device 50 controls the exhaust device 40 to reduce the pressure in the space S when high-frequency power is not applied to the coils 23 , and to set the pressure in the space S at atmospheric pressure when high-frequency power is applied to the coils 23.
1. A plasma processor, comprising at least:
a processing chamber having a closed space and holding a substrate therein;
gas supply mechanism for supplying at least an etching gas and an etching-resistant layer forming gas for forming polymers into the processing chamber;
first exhaust mechanism for reducing the pressure in the processing chamber;
power applying mechanism for applying high-frequency power;
plasma generating mechanism for, by high-frequency power being applied by the power applying mechanism, forming a plasma from the processing gas supplied into the processing chamber;
heating mechanism for heating the processing chamber;
cooling mechanism for cooling the processing chamber, the cooling mechanism configured with:
a metallic cooling member having a cooling passage through which cooling fluid flows and arranged to face the outer surface of the processing chamber at a distance therefrom;
cooling fluid supply mechanism for supplying the cooling fluid into the cooling passage of the cooling member; and
an annular seal member provided between the cooling member and the processing chamber to be in contact with them;
second exhaust mechanism for reducing the pressure in the annulus of the seal member; and
control mechanism for controlling the operations of the gas supply mechanism, first exhaust mechanism, second exhaust mechanism, power applying mechanism, heating mechanism and cooling mechanism,
the plasma processor producing deposits within the processing chamber by processing using the processing gas, wherein
the cooling fluid is water,
the distance between the cooling member and the processing chamber is set to be more than 0 μm and equal to or less than 100 μm,
the control mechanism is configured to control the second exhaust mechanism so that the pressure in the annulus of the seal member is reduced to a predetermined first target pressure when the power applying mechanism does not apply high-frequency power to the plasma generating mechanism, and to control the second exhaust mechanism so that the pressure in the annulus of the seal member becomes a second target pressure higher than the first target pressure when the power applying mechanism applies high-frequency power to the plasma generating mechanism, and
the first target pressure P (Pa) is a predetermined pressure which is set so as to satisfy the following relational equation:
P≦ 3.11×10 −6 ×T /( g×δ 2 )
(where, T (K) is the absolute temperature of the air, δ (μm) is the molecular diameter of the air (=3.72×10 −4 ), and g (μm) is the distance between the cooling member and the processing chamber) and
the control mechanism is configured to control the second exhaust mechanism so that the pressure in the annulus of the seal member is high when the amount of the high frequency power applied to the plasma generating mechanism by the power applying mechanism is large, and to control the second exhaust mechanism so that the pressure in the annulus of the seal member is low when the amount of the high-frequency power applied to the plasma generating mechanism by the power applying mechanism is small.
2. The plasma processor according to claim 1 , further comprising:
temperature detection mechanism for detecting the temperature of the processing chamber, wherein
the control mechanism is configured to control the operation of the heating mechanism based on the temperature detected by the temperature detection mechanism to set the temperature of the processing chamber at a predetermined temperature.