Magnetic material sensor and detection method employing this sensor, and target material detection sensor and target material detection kit

1. A magnetic sensor comprising:

a magnetoresistive effect film;

a current source for supplying a spin-polarized current to the magnetoresistive effect film; and

a detector for detecting whether a magnetic material is present or not, or for detecting a number of magnetic particles,

wherein the magnetoresistive effect film comprises:

a detection layer comprising a magnetic film, the magnetization direction of which is changed by perpendicularly supplying the spin-polarized current from the current source to the magnetoresistive effect film;

a magnetized pinned layer comprising a magnetic film, the magnetization direction of which is not changed by the perpendicularly supplying of the spin-polarized current from the current source to the magnetoresistive effect film; and

a non-magnetic film, which is formed between the detection layer and the magnetized pinned layer,

wherein the detection layer is thinner than the magnetized pinned layer, the thickness of said detection layer is smaller than a spin diffusion length, and the thickness of said pinned layer is larger than the spin diffusion length, and

wherein an electron of the spin-polarized current is supplied from a side of the detection layer.

2. A magnetic sensor according to claim 1 , wherein a change in the magnetization direction of the detection layer differs depending on a floating magnetic field generated by a magnetic material to be detected.

3. A magnetic sensor according to claim 1 , further comprising:

a magnetoresistive effect film that does not interact with a magnetic material to be detected,

wherein the detector employs, as a reference voltage, a voltage obtained by the magnetoresistive effect film that does not interact with the magnetic material to be detected.

4. A detection method, for employing a magnetic sensor that includes a magnetoresistive effect, comprising the steps of:

supplying a spin-polarized current to the magnetoresistive effect film; and

detecting a change in resistance at the magnetoresistive effect film to determine whether a magnetic material is present or not, or to determine a number of magnetic particles,

wherein the magnetoresistive effect film comprises:

a detection layer comprising a magnetic film, the magnetization direction of which is changed by perpendicularly supplying the spin-polarized current to the magnetoresistive effect film;

a magnetized pinned layer comprising a magnetic film, the magnetization direction of which is not changed by the perpendicularly supplying of the spin-polarized current; and

a non-magnetic film, which is formed between the detection layer and the magnetized pinned layer,

wherein the detection layer is thinner than the magnetized pinned layer, the thickness of said detection layer is smaller than a spin diffusion length, and the thickness of said pinned layer is larger than the spin diffusion length, and

wherein an electron of the spin-polarized current is supplied from a side of the detection layer.

5. A detection method according to claim 4 , further comprising the steps of:

setting to parallel magnetization directions the detection layer and the magnetized pinned layer;

supplying a current from a magnetized pinned layer side to a detection layer side so as to increase a current value as time elapses; and

detecting for the magnetoresistive effect film a resistance change, so as to determine a presence or an absence of magnetic particles, or a number of magnetic particles.

6. A detection method according to claim 4 , further comprising the steps of:

setting to antiparallel magnetization directions the detection layer and the magnetized pinned layer;

supplying a current from a detection layer side to a magnetized pinned layer side so as to increase a current value as time elapses; and

detecting for the magnetoresistive effect film a resistance change, so as to determine the presence or the absence of magnetic particles, or the number of magnetic particles.

7. A detection method according to claim 4 , further comprising the steps of:

when there is no interaction between a magnetic material to be detected and the detection layer, supplying, from the magnetized pinned layer side to the detection layer side, a current of such a magnitude that a magnetized state is changed, or supplying, when there is an interaction, a current of such a magnitude that the magnetized state is changed, but the change when there is an interaction is less than the change when there is no interaction; and

detecting a change in a resistance of the magnetoresistive effect film so as to determine a presence or an absence of magnetic particles, or a number of magnetic particles.

8. A detection method according to claim 4 , whereby a voltage, obtained by the magnetoresistive effect film, that does not interact with a magnetic material to be detected is employed as a reference voltage, and a presence or an absence of a magnetic material, or a number of magnetic particles, is detected by employing the reference voltage.

9. A target material detection sensor wherein magnetic particles are immobilized, through a target material to be detected, on one part of a magnetic material sensor according to claim 1 in order to detect the target material.

10. A target material detection kit comprising:

a target material detection sensor according to claim 9 ; and

magnetic particles modified by a material so as to be specifically coupled with a target material.