Photon enhanced thermionic emission
Photon Enhanced Thermionic Emission (PETE) is exploited to provide improved efficiency for radiant energy conversion. A hot (greater than 200° C.) semiconductor cathode is illuminated such that it emits electrons. Because the cathode is hot, significantly more electrons are emitted than would be emitted from a room temperature (or colder) cathode under the same illumination conditions. As a result of this increased electron emission, the energy conversion efficiency can be significantly increased relative to a conventional photovoltaic device. In PETE, the cathode electrons can be (and typically are) thermalized with respect to the cathode. As a result, PETE does not rely on emission of non-thermalized electrons, and is significantly easier to implement than hot-carrier emission approaches.
1. Apparatus for radiant energy conversion, the apparatus comprising:
a semiconductor photocathode having a positive electron affinity surface; and
an anode separated from said photocathode;
wherein absorption of incident radiation in said photocathode during operation of said apparatus gives rise to a distribution of electrons in a conduction band of said cathode;
wherein some or all electrons in said distribution are thermalized with respect to a temperature of said photocathode, wherein said temperature of said photocathode is greater than 200° C. during operation of said apparatus;
wherein some or all electrons in said distribution are emitted from said photocathode and received by said anode;
wherein a potential difference is established between said photocathode and said anode by electrons received at said anode to provide output electrical power;
wherein said photocathode comprises a surface coating to determine said positive electron affinity;
wherein an electron affinity of said photocathode is between 0 eV and 1 eV, and wherein said photocathode can operate at an operating temperature greater than 200° C.
2. The apparatus of claim 1 , wherein said photocathode is nano-structured such that a photon absorption length in said photocathode is less than a photon absorption length in a corresponding thin film cathode.
3. The apparatus of claim 2 , wherein said nano-structured photocathode comprises a forest of nano-wires or nano-tubes.
4. The apparatus of claim 2 , wherein said nano-structured photocathode comprises a nano-layer of said semiconductor disposed on an electrically conductive and nano-textured substrate.
5. The apparatus of claim 2 , wherein said nano-structured photocathode comprises nano-islands of said semiconductor.
6. The apparatus of claim 1 , wherein a conversion efficiency from said incident radiation to said output electrical power is greater than 10%.
7. The apparatus of claim 1 , further comprising a heat engine to generate work from heat generated at said anode and/or cathode.
8. The apparatus of claim 1 , wherein said incident radiation comprises sunlight.
9. The apparatus of claim 1 , further comprising an optical concentrator to increase an intensity of said incident radiation at said photocathode.
10. The apparatus of claim 1 , further comprising a plasmon resonance concentrator to increase an intensity of said incident radiation at said photocathode.
11. The apparatus of claim 1 , wherein said temperature of said photocathode is passively determined.
12. The apparatus of claim 1 , wherein a work function of said anode is less than 2.5 eV and wherein said anode can operate at an operating temperature greater than 200° C.