Methods of thermally treating a semiconductor wafer
A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.
1. A method of thermally treating a wafer, comprising:
detecting a defect in the wafer;
loading the wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient;
positioning the defect within one of the one or more regions of uniform temperature gradient; and
performing a rapid thermal process on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.
2. The method of claim 1 , wherein the process chamber has a hexahedron-shape and a quadrangle-cross section; and
wherein the one or more regions of non-uniform temperature gradient regions correspond to corner regions of the quadrangle-cross section.
3. The method of claim 1 , wherein the rapid thermal process is a flash lamp annealing process.
4. The method of claim 1 , wherein detecting the defect of the wafer comprises:
rotating the wafer; and
taking a photograph of a surface of the wafer using a fixed camera.
5. The method of claim 1 , wherein detecting the defect of the wafer comprises:
fixing the wafer;
moving a camera around the wafer; and
taking a photograph of a surface of the wafer using the camera.
6. The method of claim 1 , wherein detecting the defect of the wafer comprises:
fixing the wafer;
rotating an optical axis of a camera with respect to the wafer; and
taking a photograph of a surface of the wafer using the camera.
7. The method of claim 1 , further comprising:
detecting crystal direction of the wafer;
aligning the wafer such that a crystal direction of the wafer faces toward one of the one or more regions of uniform temperature gradient; and
performing a rapid thermal process on the wafer in the process chamber while the crystal direction of the wafer faces the one of the one or more regions of uniform temperature gradient.
8. The method of claim 7 , wherein detecting the crystal direction of the wafer comprises:
rotating the wafer; and
taking a photograph of a notch of the wafer using a fixed camera.
9. The method of claim 7 , wherein detecting the crystal direction of the wafer comprises:
fixing the wafer;
moving a camera around the wafer; and
taking a photograph of a notch of the wafer using the camera.
10. The method of claim 1 , wherein the process chamber comprises:
a chamber housing having a hexahedron-shape and a quadrangle-cross section;
a supporting member on which the wafer is set, the supporting member disposed in the chamber housing;
a first arc lamp disposed under the supporting member, the first arc lamp bulk-heating the wafer at a first temperature; and
a second arc lamp disposed over the supporting member, the second arc lamp heating the wafer for a period of time on the order of milliseconds at a second temperature higher than the first temperature,
wherein the wafer is aligned to locate the defect in a corner region of the chamber housing prior to loading the wafer on the supporting member.
11. A method of thermally treating a wafer, comprising:
detecting a defect in the wafer and a crystal direction of the wafer;
loading the wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient;
positioning the defect within one of the one or more regions of uniform temperature gradient and to face the crystal direction of the wafer toward one of the one or more regions of uniform temperature gradient of the process chamber; and
performing a rapid thermal process on the wafer in the process chamber while the crystal direction of the wafer faces towards the one of the one or more regions of uniform temperature gradient of the process chamber.
12. The method of claim 11 , wherein the process chamber has a hexahedron-shape and a quadrangle-cross section; and
wherein the non-uniform temperature gradient regions are corner regions of the quadrangle-cross section.
13. The method of claim 11 , wherein detecting the crystal direction of the wafer comprises:
rotating the wafer; and
taking a photograph of a notch of the wafer using a fixed camera.
14. The method of claim 11 , wherein detecting the crystal direction of the wafer comprises:
fixing the wafer;
moving a camera around the wafer; and
taking a photograph of a notch of the wafer using the camera.
15. The method of claim 11 , wherein the rapid thermal process is a flash lamp annealing process.