Zinc oxide precursor containing alkyl zinc halide and method of depositing zinc oxide-based thin film using the same
A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R—Zn—X, where R is an alkyl group C n H 2n+1 , and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.
1. A zinc oxide precursor composition for use in deposition of a zinc oxide-based thin film, comprising:
an alkyl zinc halide having the following formula:
R—Zn—X,
where R is an alkyl group C n H 2n+1 , and X is a halogen group;
a carrier gas; and
an oxidizing gas.
2. The zinc oxide precursor composition of claim 1 , wherein the n in the alkyl group is a number ranging from 1 to 4.
3. The zinc oxide precursor composition of claim 2 , wherein the alkyl group comprises one selected from the group consisting of a methyl group, an ethyl group, an i-propyl group and a t-butyl group.
4. The zinc oxide precursor composition of claim 1 , wherein the halogen group comprises one selected from the group consisting of F, Br, Cl and I.
5. The zinc oxide precursor composition of claim 1 , wherein the alkyl group comprises a methyl group or an ethyl group, and the halogen group comprises Cl.
6. The zinc oxide precursor composition of claim 1 , comprising a zinc oxide precursor for use in atmospheric pressure chemical vapor deposition.