Charged particle beam writing apparatus and charged particle beam writing method
A charged particle beam writing apparatus includes an unit to measure height positions of a substrate, an unit to input a position dependent height distribution obtained by converting each position error of a pattern generated depending on each corresponding writing position of the substrate into a value in a height direction, and to add the position dependent height distribution to a height distribution obtained based on the height positions in order to correct the height distribution of the substrate, an unit to calculate a deflection shift amount of a pattern to be written by using a corrected height distribution, an unit to calculate a deflection amount for deflecting a beam to a position where a calculated deflection shift amount has been corrected, and an unit to write a pattern on the substrate by deflecting the beam by a calculated deflection amount.
1. A charged particle beam writing apparatus comprising:
a measurement unit configured to measure a plurality of height positions of a substrate to be written;
a height distribution correction unit configured to input a position dependent height distribution that is obtained by converting each position error of a pattern generated depending on each corresponding writing position of the substrate into a value in a height direction, and to add the position dependent height distribution to a height distribution that is obtained based on the plurality of height positions, to generate a corrected height distribution of the substrate, wherein the each position error of the pattern includes a component depending on each corresponding writing position of the substrate, and excludes a component depending on each corresponding writing time for the substrate;
a deflection shift amount calculation unit configured to calculate a deflection shift amount of a pattern to be written by using the corrected height distribution;
a deflection amount calculation unit configured to calculate a deflection amount for deflecting a charged particle beam to a position where a calculated deflection shift amount has been corrected; and
a writing unit configured to write a pattern on the substrate by deflecting the charged particle beam by a calculated deflection amount.
2. The apparatus according to claim 1 , wherein
the height distribution correction unit further inputs a time dependent height distribution that is obtained by converting each position error of a pattern generated depending on each corresponding writing time for the substrate into a value in the height direction, and further adds the time dependent height distribution to a corrected height distribution of the substrate, in order to further correct the height distribution of the substrate,
the deflection shift amount calculation unit further calculates a deflection shift amount of a pattern to be written by using the height distribution corrected by the time dependent height distribution, and
the deflection amount calculation unit further calculates a deflection amount for deflecting a charged particle beam to a position where the deflection shift amount based on the height distribution corrected by using the time dependent height distribution has been corrected.
3. The apparatus according to claim 1 , further comprising
a height distribution generation unit configured to generate the height distribution by using a measured height position of the substrate.
4. The apparatus according to claim 1 , further comprising
a position dependent height distribution calculation unit
configured to calculate the position dependent height distribution that is obtained by converting each position error of a pattern generated depending on each corresponding writing position of the substrate into a value in the height direction.
5. The apparatus according to claim 2 , further comprising
a time dependent height distribution calculation unit configured to calculate the time dependent height distribution that is obtained by converting a position error of a pattern generated depending on a writing time for the substrate into a value in the height direction.
6. A charged particle beam writing apparatus comprising:
a measurement unit configured to measure a plurality of height positions of a substrate to be written;
a height distribution correction unit configured to input a time dependent height distribution that is obtained by converting each position error of a pattern generated depending on each corresponding writing time for the substrate into a value in a height direction, and to add the time dependent height distribution to a height distribution that is obtained based on the plurality of height positions, to generate a corrected height distribution of the substrate, wherein the each position error of the pattern includes a component depending on each corresponding writing time for the substrate and excludes a component depending on each corresponding writing position of the substrate;
a deflection shift amount calculation unit configured to calculate a deflection shift amount of a pattern to be written by using the corrected height distribution;
a deflection amount calculation unit configured to calculate a deflection amount for deflecting a charged particle beam to a position where a calculated deflection shift amount has been corrected; and
a writing unit configured to write a pattern on the substrate by deflecting the charged particle beam by a calculated deflection amount.
7. The apparatus according to claim 6 , further comprising
a height distribution generation unit configured to generate the height distribution by using a measured height position of the substrate.
8. The apparatus according to claim 6 , further comprising
a time dependent height distribution calculation unit
configured to calculate the time dependent height distribution that is obtained by converting each position error of a pattern generated depending on each corresponding writing time for the substrate into a value in the height direction.
9. A charged particle beam writing method comprising:
measuring a plurality of height positions of a substrate to be written;
inputting a position dependent height distribution that is obtained by converting each position error of a pattern generated depending on each corresponding writing position of the substrate into a value in a height direction, and adding the position dependent height distribution to a height distribution that is obtained based on the plurality of height positions, to generate a corrected height distribution of the substrate, wherein the each position error of the pattern includes a component depending on each corresponding writing position of the substrate, and excludes a component depending on each corresponding writing time for the substrate;
calculating a deflection shift amount of a pattern to be written by using the corrected height distribution;
calculating a deflection amount for deflecting a charged particle beam to a position where a calculated deflection shift amount has been corrected; and
writing a pattern on the substrate by deflecting the charged particle beam by a calculated deflection amount.
10. A charged particle beam writing method comprising:
measuring a plurality of height positions of a substrate to be written;
inputting a time dependent height distribution that is obtained by converting each position error of a pattern generated depending on each corresponding writing time for the substrate into a value in a height direction, and adding the time dependent height distribution to a height distribution that is obtained based on the plurality of height positions, to generate a corrected height distribution of the substrate, wherein the each position error of the pattern includes a component depending on each corresponding writing time for the substrate and excludes a component depending on each corresponding writing position of the substrate;
calculating a deflection shift amount of a pattern to be written by using the corrected height distribution;
calculating a deflection amount for deflecting a charged particle beam to a position where a calculated deflection shift amount has been corrected; and
writing a pattern on the substrate by deflecting the charged particle beam by a calculated deflection amount.