Method of making double-sided wavelength converter and light generating device using same

1. A method of forming a light conversion element, comprising:

providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element;

etching a first region in the first photoluminescent element from a first side of the semiconductor construction; and

etching a second region in the second photoluminescent element from a second side of the semiconductor construction,

wherein the semiconductor construction is provided to be attached to a first substrate and the first region in the first photoluminescent element is etched while the semiconductor construction is attached to the first substrate, and the semiconductor construction is transferred from the first substrate to a second substrate and the second region in the second photoluminescent element is etched while the semiconductor construction is attached to the second substrate, and

wherein the light conversion element comprises the first and second photoluminescent elements, the first photoluminescent element is configured to convert absorbed light to a first converted wavelength, and the second photoluminescent element is configured to convert absorbed light to a second converted wavelength.

2. A method as recited in claim 1 , wherein the first photoluminescent element includes cadmium magnesium zinc selenide (CdMgZnSe), and etching the first photoluminescent element comprises exposing the first photoluminescent element to a solution of at least one of HCl and HBr.

3. A method of forming a multiwavelength light emitting diode (LED), comprising:

forming the light conversion element according to claim 1 ; and

attaching the light conversion element to an LED.

4. A method as recited in claim 3 , wherein attaching the light conversion element to the LED comprises adhering the light conversion element to the LED using an adhesive layer.

5. A method of forming a light conversion element, comprising:

forming a semiconductor construction on a first substrate, comprising:

epitaxially growing a second photoluminescent element on the first substrate;

forming an etch stop layer on the second photoluminescent element; and

epitaxially growing a first photoluminescent element on the etch stop layer;

etching a first region in the first photoluminescent element from a first side of the semiconductor construction;

removing the first substrate;

transferring the semiconductor construction from the first substrate to a second substrate; and

etching a second region in the second photoluminescent element from a second side of the semiconductor construction,

wherein the light conversion element comprises the first and second photoluminescent elements, the first photoluminescent element is configured to convert absorbed light to a first converted wavelength, and the second photoluminescent element is configured to convert absorbed light to a second converted wavelength.

6. A method as recited in claim 5 , wherein the second substrate comprises an electroluminescent device.

7. A method as recited in claim 5 , wherein the second substrate comprises an intermediate substrate, and further comprising transferring the semiconductor construction from the intermediate substrate to an electroluminescent device after etching the second region.

8. A method as recited in claim 5 , further comprising providing a first passivation layer to the first region after etching the first region.

9. A method as recited in claim 8 , further comprising planarizing the first passivation layer.

10. A method as recited in claim 8 , further comprising providing a second passivation layer to the second region after etching the second region.

11. A method as recited in claim 10 , further comprising planarizing the second passivation layer.

12. A method as recited in claim 5 , wherein the etch stop layer is formed of a semiconductor material based on cadmium zinc selenide (CdZnSe) and further comprising etching the etch-stop layer by exposing the etch stop layer to a solution of Hbr/H 2 O/Br 2 .

13. A method as recited in claim 5 , wherein the first photoluminescent element includes cadmium magnesium zinc selenide (CdMgZnSe), and etching the first photoluminescent element comprises exposing the first photoluminescent element to a solution of at least one of HCl and HBr.

14. A method of forming a light conversion element, comprising:

providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element;

etching a first region in the first photoluminescent element from a first side of the semiconductor construction; and

etching a second region in the second photoluminescent element from a second side of the semiconductor construction,

wherein the semiconductor construction is provided with an etch stop layer disposed between the first and second photoluminescent elements, and

wherein the light conversion element comprises the first and second photoluminescent elements, the first photoluminescent element is configured to convert absorbed light to a first converted wavelength, and the second photoluminescent element is configured to convert absorbed light to a second converted wavelength.