Capacitors and methods with praseodymium oxide insulators
Methods of forming and the resulting capacitors formed by these methods are shown. Monolayers that contain praseodymium are deposited onto a substrate and subsequently processed to form praseodymium oxide dielectrics. Monolayers that contain titanium or other metals are deposited onto a substrate and subsequently processed to form metal electrodes. Resulting capacitor structures includes properties such as improved dimensional control. One improved dimensional control includes thickness. Some resulting capacitor structures also include properties such as an amorphous or nanocrystalline microstructure. Selected components of capacitors formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.
1. A method of forming a capacitor, comprising:
forming a horizontal first electrode on a semiconductor substrate;
forming a dielectric over a portion of the horizontal first electrode, including:
forming at least one chemically adhered monolayer that includes praseodymium; and
oxidizing the at least one chemically adhered monolayer to form a praseodymium oxide monolayer;
forming a second horizontal metal electrode over the dielectric; and
forming interfacial layers between the dielectric and the electrodes.
2. The method of claim 1 , wherein forming interfacial layers includes forming at least one Pr—O—N interfacial layer.
3. The method of claim 2 , wherein forming Pr—O—N interfacial layers includes forming layers including approximately 40 atomic percent praseodymium, approximately 20 atomic percent oxygen, and approximately 40 atomic percent nitrogen.
4. The method of claim 1 , wherein forming interfacial layers includes forming at least one TiN interfacial layer.
5. The method of claim 1 , wherein forming interfacial layers includes forming at least one Ti—Si—N interfacial layer.
6. The method of claim 1 , wherein forming interfacial layers includes forming at least one Pr—Si—O interfacial layer.
7. A method of forming a capacitor, comprising:
forming a trench in a substrate
forming a first electrode within the trench;
forming a dielectric over a portion of the first electrode, including:
forming at least one chemically adhered monolayer that includes praseodymium; and
oxidizing the at least one chemically adhered monolayer to form a praseodymium oxide monolayer;
forming a second metal electrode over the dielectric; and
forming interfacial layers between the dielectric and the electrodes.
8. The method of claim 7 , wherein forming interfacial layers includes forming at least one Pr—O—N interfacial layer.
9. The method of claim 8 , wherein forming Pr—O—N interfacial layers includes forming layers including approximately 40 atomic percent praseodymium, approximately 20 atomic percent oxygen, and approximately 40 atomic percent nitrogen.
10. The method of claim 7 , wherein forming interfacial layers includes forming at least one TiN interfacial layer.
11. The method of claim 7 , wherein forming interfacial layers includes forming at least one Ti—Si—N interfacial layer.
12. The method of claim 7 , wherein forming interfacial layers includes forming at least one Pr—Si—O interfacial layer.