Method of manufacturing semiconductor device
According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of SiO 2 , planarizing the surface of the to-be-processed film, and etching the planarized surface of the to-be-processed film.
1. A manufacturing method of a semiconductor device comprising:
forming a to-be-processed film comprising a convex potion and concave potion on its surface on a semiconductor substrate via layer having a relative dielectric constant smaller than that of SiO 2 ;
planarizing the surface of the to-be-processed film; and
etching the planarized surface of the to-be-processed film.
2. The method of claim 1 , wherein the planarizing the surface of the to-be-processed film comprises chemically mechanically polishing the to-be-processed film by sliding the to-be-processed film and a polishing pad with a negative Rsk value while bringing the surface of the to-be-processed film into contact with a surface of the polishing pad.
3. The method of claim 2 , wherein the planarizing the surface of the to-be-processed film further comprises conditioning the polishing pad by making the surface temperature of the polishing pad 40° C. or more while bringing a dresser into contact with the surface of the polishing pad.
4. The method of claim 3 , wherein in the conditioning the polishing pad, the surface temperature of the polishing pad is 80° C. or less.
5. The method of claim 3 , wherein the surface temperature of the polishing pad is adjusted by supplying a water vapor to the polishing pad.
6. The method of claim 2 , wherein the planarizing the surface of the to-be-processed film further comprises conditioning the polishing pad by bringing a dresser with a positive Rsk value into contact with the surface of the to-be-processed film.
7. The method of claim 1 , wherein the planarizing the surface of the to-be-processed film comprises:
forming a surface layer along the convex potion and concave potion on the to-be-processed film; and
removing the surface layer on the convex portion while leaving the surface layer on the concave portion by a processing body in a processing solution for dissolving the to-be-processed film, and selectively dissolving the convex portion of the to-be-processed film by the processing solution by making the dissolution degree of the convex portion larger than the dissolution degree of the concave portion.
8. The method of claim 7 , wherein the processing body comprises a resin material.
9. The method of claim 7 , wherein the processing body comprises a catalyst material.
10. The method of claim 7 , wherein the to-be-processed film comprises SiO 2 , and the processing solution comprises fluoro hydrogen solution, ammonium fluoride solution, or strong alkaline solution.
11. The method of claim 7 , wherein the surface layer is a layer of a surfactant.
12. The method of claim 11 , wherein the surfactant comprises polyvinyl pyrrolidone or polyethyleneimine.
13. The method of claim 12 , wherein the surfactant further comprises polyacrylic acid.
14. The method of claim 7 , wherein the surface layer is a self-assembled monolayer.
15. The method of claim 7 , wherein the surface layer is a water-repellent treated layer.
16. The method of claim 1 , wherein the planarizing the surface of the to-be-processed film comprises:
forming a surface layer on the to-be-processed film along the convex potion and concave potion, the surface layer being formed by bringing a processing solution containing a component for forming the surface layer into contact with the to-be-processed film; and
removing the surface layer on the convex portion while leaving the surface layer on the concave portion by a processing body in a processing solution containing a component for dissolving the to-be-processed film, and selectively dissolving the convex portion of the to-be-processed film by the processing solution by making the dissolution degree of the convex portion larger than the dissolution degree of the concave portion.
17. The method of claim 1 , wherein the layer is an air gap.
18. The method of claim 1 , wherein the layer is a porous layer.
19. The method of claim 1 , wherein the thickness of the to-be-processed film after the planarizing the surface of the to-be-processed film is 480 nm or more.
20. The method of claim 1 , wherein the etching the planarized surface of the to-be-processed film is executed by RIE or wet etching.