IP Library Granted Patent US 8,877,323
Granted Patent B2
US 8,877,323 · App. 12/956,209 · Granted Nov 4, 2014

Semiconductor structures and method for fabricating the same

Inventors: Tsung-Chieh Chang (Sinshih Township, Tainan County, TW); Ching-Hung Ko (Sinshih Township, Tainan County, TW); Mu-Jia Liu (Sinshih Township, Tainan County, TW)
Assignee: Himax Technologies Limited
B32B7/14H01L2224/94H01L24/13H01L2224/13099H01L24/94H01L2224/81139H01L2224/81201H01L2224/81191H01L2224/1319B32B2457/14B32B17/06H01L2224/1163H01L2224/16227B32B37/12H01L2224/13082H01L2224/8134B32B2313/00H01L2224/11436H01L2224/1601H01L24/81H01L24/16H01L2224/10135
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,877,323
App. No.
12/956,209
Granted
Nov 4, 2014
Kind
B2
Abstract

A semiconductor structure is provided. The semiconductor structure includes a first substrate, a second substrate opposite to the first substrate, a plurality of spacers disposed between the first substrate and the second substrate, and an adhesive material bonded with the first substrate and the second substrate within the two adjacent spacers. The invention also provides a method for fabricating the semiconductor structure.

Claims (10)

1. A semiconductor structure, comprising:

a first substrate;

a second substrate opposite to the first substrate;

a plurality of spacers disposed between the first substrate and the second substrate; and

an adhesive material bonded with the first substrate and the second substrate, restricted within the two adjacent spacers, wherein each of the plurality spacers is exposed at sidewalls of the semiconductor structure, and sidewalls of the spacer are aligned with sidewalls of the first substrate and the second substrate.

2. The semiconductor structure as claimed in claim 1 , wherein the second substrate comprises glass.

3. The semiconductor structure as claimed in claim 1 , wherein the spacer comprises plastics.

4. The semiconductor structure as claimed in claim 1 , wherein the adhesive material comprises non-photo-sensitive material.

5. The semiconductor structure as claimed in claim 1 , wherein the spacers have the same thickness.

6. The semiconductor structure as claimed in claim 5 , wherein the thickness of the spacer is similar to that of the adhesive material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 30, 2010
From: CHANG, TSUNG-CHIEH; KO, CHING-HUNG; LIU, MU-JIA
To: HIMAX TECHNOLOGIES LIMITED
Reel/Frame 025432/0211 →
Continuity (1)
Related Publication 20120135201A1 · May 31, 2012