Semiconductor device and manufacturing method thereof
View Patent ↗An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of the parasitic capacitance was reduced, at low cost. An insulating layer other than a gate insulating layer is provided between a wiring which is formed of the same material layer as a gate electrode of the transistor and a wiring which is formed of the same material layer as a source electrode or a drain electrode.
1. A display device comprising:
a first wiring including a gate electrode over a substrate;
a gate insulating layer over the gate electrode;
an oxide semiconductor layer over the gate insulating layer;
a second wiring including one of a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
an insulating layer over the oxide semiconductor layer;
an organic insulating layer over the insulating layer; and
a pixel electrode layer over the organic insulating layer, wherein the pixel electrode layer is in electrical contact with the other of the source electrode and the drain electrode through a contact hole opened in the insulating layer and the organic insulating layer,
wherein the first wiring and the second wiring include a portion overlapped with each other, and
wherein a transparent conductive layer overlaps the portion.
2. The display device according to claim 1 , wherein the oxide semiconductor layer includes indium, gallium and zinc.
3. The display device according to claim 1 , wherein the oxide semiconductor layer is formed over the source electrode and the drain electrode.
4. The display device according to claim 1 , further comprising a resist mask over the first wiring.
5. The display device according to claim 1 , wherein the display device is incorporated in one selected from the group consisting of a poster, an advertisement, an e-book reader, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a cellular phone.
6. A display device comprising:
a first wiring including a gate electrode over a substrate;
a gate insulating layer over the gate electrode;
an oxide semiconductor layer over the gate insulating layer;
a second wiring including one of a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
an insulating layer over the oxide semiconductor layer;
an organic insulating layer over the insulating layer;
a pixel electrode layer over the organic insulating layer, wherein the pixel electrode layer is in electrical contact with the other of the source electrode and the drain electrode through a contact hole opened in the insulating layer and the organic insulating layer; and
a liquid crystal layer over the pixel electrode layer,
wherein the first wiring and the second wiring include a portion overlapped with each other, and
wherein a transparent conductive layer overlaps the portion.
7. The display device according to claim 6 , wherein the oxide semiconductor layer includes indium, gallium and zinc.
8. The display device according to claim 6 , wherein the oxide semiconductor layer is formed over the source electrode and the drain electrode.
9. The display device according to claim 6 , further comprising a resist mask over the first wiring.
10. The display device according to claim 6 , wherein the display device is incorporated in one selected from the group consisting of a poster, an advertisement, an e-book reader, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a cellular phone.
11. A display device comprising:
a first wiring including a gate electrode over a substrate;
a gate insulating layer over the gate electrode;
an oxide semiconductor layer over the gate insulating layer;
a second wiring including one of a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
an insulating layer over the oxide semiconductor layer;
an organic insulating layer over the insulating layer;
a pixel electrode layer over the organic insulating layer, wherein the pixel electrode layer is in electrical contact with the other of the source electrode and the drain electrode through a contact hole opened in the insulating layer and the organic insulating layer; and
a light-emitting layer over the pixel electrode layer,
wherein the first wiring and the second wiring include a portion overlapped with each other, and
wherein a transparent conductive layer overlaps the portion.
12. The display device according to claim 11 , wherein the oxide semiconductor layer includes indium, gallium and zinc.
13. The display device according to claim 11 , wherein the oxide semiconductor layer is formed over the source electrode and the drain electrode.
14. The display device according to claim 11 , further comprising a resist mask over the first wiring.
15. The display device according to claim 11 , wherein the display device is incorporated in one selected from the group consisting of a poster, an advertisement, an e-book reader, a television set, a digital photo frame, a portable amusement machine, a slot machine, and a cellular phone.