Production of graphene sheets and features via laser processing of graphite oxide/ graphene oxide
Graphene production using a continuous or pulsed laser beam focused on a substrate of graphite oxide in a significantly inert environment is disclosed. Laser-induced graphene features are characterized by a 2D-band in the Raman spectra. When the photons of the laser at a various frequencies and power levels beam impinge a graphite oxide foil for various amounts of time, a strip, divet, trench, or hole, having graphene at the bottom or sides is produced. The concentration of the graphite oxide and the laser beam may be adjusted so that the depth of the trench created is a certain depth less than the thickness of the foil. Additionally, in some embodiments, the evaporation of the water during the Hummers method is adjusted so that there remains interlaminar water in the graphite oxide foil. The presently disclosed subject matter may also be used in patterning using rastering or substrate motion.
1. A method of producing graphene, comprising:
preparing a graphite oxide substrate by:
exfoliating a plurality of graphene oxide sheets in an aqueous solution;
neutralizing the aqueous solution to produce neutralized aqueous solution;
centrifuging the neutralized aqueous solution; and
allowing at least a portion of the water in the aqueous solution to evaporate or spin coating the aqueous solution on a material to provide for the graphite oxide substrate having a substrate depth;
placing the graphite oxide substrate in an inert gaseous environment; and
exposing an area of the graphite oxide substrate to a laser beam that produces ultraviolet and vacuum ultraviolet photons to reduce the graphite oxide by electronic excitations while in the inert gaseous environment to create graphene,
wherein the inert gaseous environment comprises a rare gas or hydrogen.
2. The method of claim 1 , wherein the inert gaseous environment further comprises nitrogen.
3. The method of claim 2 , wherein the inert gaseous environment further comprises a dopant to provide for an n- or p-type graphene characterization.
4. The method of claim 1 , wherein the laser beam is from a pulsed laser source or a continuous wave laser source.
5. The method of claim 1 , wherein the wavelength of the laser beam is 532 nm or 355 nm.
6. The method of claim 1 , wherein the area of the graphite oxide substrate is exposed for approximately 3 seconds to approximately 30 seconds.
7. The method of claim 1 , wherein the laser beam is rasterized.
8. The method of claim 1 , wherein the laser beam is focused or unfocused.
9. The method of claim 1 , wherein the dried exfoliated graphene oxide sheets comprise interlaminar water.
10. The method of claim 1 , wherein the rare gas is selected from the group consisting of argon, xenon and neon.
11. A system for producing graphene, comprising:
a laser source configured to provide a laser beam;
a graphite oxide substrate produced by:
exfoliating a plurality of graphene oxide sheets in an aqueous solution;
neutralizing the aqueous solution to produce neutralized aqueous solution;
centrifuging the neutralized aqueous solution; and
allowing at least a portion of the water in the aqueous solution to evaporate or spin coating the aqueous solution on a material to provide for the graphite oxide substrate having a substrate depth; and
an inert gaseous environment provided by a gas flow cell having a gaseous inlet and a gaseous out, wherein the graphite oxide substrate is disposed within the inert gaseous environment, wherein an area of the graphite oxide substrate is exposed to the laser beam, wherein the laser beam produces ultraviolet and vacuum ultraviolet photons that reduce the graphite oxide by electronic excitations to create graphene,
wherein the inert gaseous environment comprises a rare gas or hydrogen.
12. The system of claim 11 , wherein the laser beam is rasterized.
13. The system of claim 11 , wherein the laser beam is focused or unfocused.
14. The system of claim 11 , wherein the laser beam is from a pulsed laser source or a continuous wave laser source.
15. The system of claim 11 , wherein the area of the graphite oxide substrate is exposed for approximately 3 seconds to approximately 30 seconds.
16. The system of claim 11 , wherein the wavelength of the laser is 532 nm or 355 nm.
17. The system of claim 11 , wherein the inert gaseous environment comprises nitrogen.
18. The system of claim 11 , wherein the inert gaseous environment further comprises a dopant to provide for an n- or p-type graphene characterization.
19. The system of claim 11 , wherein the dried exfoliated graphene oxide sheets comprise interlaminar water.