IP Library › Granted Patent US 8,883,351
Granted Patent B2
US 8,883,351 · App. 13/629,645 · Granted Nov 11, 2014

Graphene and power storage device, and manufacturing method thereof

Inventors: Hiroatsu Todoriki (Kanagawa, JP); Yumiko Saito (Kanagawa, JP); Takahiro Kawakami (Kanagawa, JP); Kuniharu Nomoto (Saitama, JP); Mikio Yukawa (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01M4/583H01G11/22H01M6/16H01M4/0452H01M4/139H01M10/0566H01G9/042H01M4/62H01G11/32Y02E60/13C01B31/0476
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Quick Facts
Patent No.
US 8,883,351
App. No.
13/629,645
Granted
Nov 11, 2014
Kind
B2
Abstract

The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

Claims (44)

1. A method for forming an electrode material, comprising:

forming a layer including graphene oxide on a first conductive layer;

immersing the first conductive layer and a second conductive layer that is different from the first conductive layer in an electrolyte after forming the layer; and

electrochemically reducing at least part of the graphene oxide in the layer on the first conductive layer,

wherein the electrolyte includes lithium,

wherein a potential is swept in a potential range including a potential at which the reduction is performed, and

wherein a sweep rate of the sweeping is set to higher than or equal to 0.005 mV/s and lower than or equal to 1 mV/s.

2. The method for forming the electrode material, according to claim 1 ,

wherein the electrolyte is an aprotic organic solvent.

3. The method for forming the electrode material, according to claim 1 ,

wherein the first conductive layer on which the layer is formed is a working electrode, and

wherein the second conductive layer is a counter electrode.

4. The method for forming the electrode material, according to claim 1 ,

wherein the sweeping is periodically performed.

5. The method for forming the electrode material, according to claim 1 ,

wherein the potential range is set to higher than or equal to 1.6 V and lower than or equal to 2.4 V with reference to a redox potential of lithium.

6. The method for forming the electrode material, according to claim 1 ,

wherein the graphene oxide includes a substituent formed in such a manner that at least one of a carbonyl group and a hydroxyl group reacts with ammonia, amine, or an alkali metal.

7. The method for forming the electrode material, according to claim 1 ,

wherein the reduced graphene oxide comprising:

carbon atoms whose proportion measured by X-ray photoelectron spectroscopy is higher than or equal to 80% and lower than or equal to 90%; and

oxygen atoms whose proportion measured by X-ray photoelectron spectroscopy is higher than or equal to 10% and lower than or equal to 20%, and

wherein a proportion of sp 2 -bonded carbon atoms of the carbon atoms is higher than or equal to 50% and lower than or equal to 80%.

8. A method for manufacturing an electrode, comprising:

forming an active layer including at least an active material and graphene oxide over a current collector; and

electrochemically reducing at least part of the graphene oxide in the active material layer over the current collector,

wherein the reduction is performed in an electrolyte including lithium,

wherein a potential is swept in a potential range including a potential at which the reduction is performed, and

wherein a sweep rate of the sweeping is set to higher than or equal to 0.005 mV/s and lower than or equal to 1 mV/s.

9. The method for manufacturing the electrode, according to claim 8 ,

wherein the reduction is performed in an aprotic organic solvent.

10. The method for manufacturing the electrode, according to claim 8 ,

wherein the sweeping is periodically performed.

11. The method for manufacturing the electrode, according to claim 8 ,

wherein the potential range is set to higher than or equal to 1.6 V and lower than or equal to 2.4 V with reference to a redox potential of lithium.

12. The method for manufacturing the electrode, according to claim 8 ,

wherein the graphene oxide includes a substituent formed in such a manner that at least one of a carbonyl group and a hydroxyl group reacts with ammonia, amine, or an alkali metal.

13. The method for manufacturing the electrode, according to claim 8 ,

wherein the reduced graphene oxide comprising:

carbon atoms whose proportion measured by X-ray photoelectron spectroscopy is higher than or equal to 80% and lower than or equal to 90%; and

oxygen atoms whose proportion measured by X-ray photoelectron spectroscopy is higher than or equal to 10% and lower than or equal to 20%, and

wherein a proportion of sp 2 -bonded carbon atoms of the carbon atoms is higher than or equal to 50% and lower than or equal to 80%.

14. A method for manufacturing a power storage device, comprising:

forming the electrode according to claim 8 as at least one of a positive electrode and a negative electrode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2012
From: TODORIKI, HIROATSU; SAITO, YUMIKO; KAWAKAMI, TAKAHIRO; NOMOTO, KUNIHARU; YUKAWA, MIKIO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 029406/0371 →
Priority Claims (1)
JP 2011-217897 · Sep 30, 2011 · national
Continuity (1)
Related Publication 20130266869A1 · Oct 10, 2013