Sidewall image transfer process

1. A method comprising:

forming a set of sidewall spacers next to a plurality of mandrels, said set of sidewall spacers being directly on top of a second hard-mask layer;

forming a photo-resist block mask, said photo-resist block mask exposing at least a portion of said set of sidewall spacers and covering rest of said set of sidewall spacers;

transferring image of said at least a portion of said set of sidewall spacers to said second hard-mask layer to form a device pattern; and

transferring said device pattern from said second hard-mask layer to a substrate underneath said second hard-mask layer, including transferring said device pattern to a first hard-mask layer, said first hard-mask layer being underneath said second hard-mask layer and separated from thereof by a planarization layer, said planarization layer being an amorphous carbon layer.

2. The method of claim 1 , wherein forming said set of sidewall spacers comprises:

creating said plurality of mandrels from a planarization layer, said planarization layer being directly on top of said hard-mask layer;

depositing a conformal layer of dielectric material suitable for said sidewall spacers covering said plurality of mandrels; and

performing directional etching of said conformal layer to create said set of sidewall spacers.

3. The method of claim 2 , wherein creating said plurality of mandrels comprises:

depositing an anti-reflective coating layer on top of said planarization layer;

forming a photo-resist pattern of said plurality of mandrels lithographically on top of said anti-reflective coating layer;

transferring said photo-resist pattern into said planarization layer through directional etching of said planarization layer utilizing said hard-mask layer underneath thereof as an etch-stop layer.

4. The method of claim 1 , further comprising removing said sidewall spacers remaining on top of said device pattern of said second hard-mask layer and the rest of said second hard-mask layer through a burn-off process.

5. The method of claim 4 , wherein said burn-off process comprises subjecting said sidewall spacers to a plasma environment, wherein said plasma environment comprises fluorocarbon gas of CF4 or C4F8, hydrogenated fluorocarbon gas CHxFy, and diluting gas of Ar or nitrogen.

6. The method of claim 1 , wherein said first and second hard-mask layers are titanium-nitride layers and wherein said planarization layer is of a material that is able to withstand a process of depositing said second titanium-nitride layer on top thereof without causing decomposition.

7. The method of claim 1 , wherein said second hard-mask layer has a thickness that is equal or less than that of said first hard-mask layer, and wherein said planarization layer has a thickness ranging from about 10 nm to about 100 nm.

8. A method of performing sidewall spacer image transfer, said method comprising:

forming a set of sidewall spacers next to a set of mandrels respectively, said set of sidewall spacers being directly on top of a second hard-mask layer;

transferring image of at least a portion of said set of sidewall spacers to said second hard-mask layer to form a device pattern; and

transferring said device pattern from said second hard-mask layer to a first hard-mask layer and subsequently to a substrate underneath said first hard-mask layer,

wherein said first and second hard-mask layers are titanium-nitride layers separated by a planarization layer, said planarization layer is of a material that is able to withstand a process of depositing said second titanium-nitride layer on top thereof without causing decomposition.

9. The method of claim 8 , wherein forming said set of sidewall spacers comprises:

creating said set of mandrels from a planarization layer, said planarization layer being directly on top of said second hard-mask layer;

depositing a conformal layer of dielectric material covering said set of mandrels, said dielectric material being suitable for said sidewall spacers; and

performing directional etching to remove said conformal layer thereby leaving only said set of sidewall spacers at sidewalls of said set of mandrels.

10. The method of claim 9 , wherein creating said set of mandrels comprises:

depositing an anti-reflective coating layer on top of said planarization layer;

exposing lithographically a photo-resist layer on top of said anti-reflective coating layer to form a photo-resist pattern of said set of mandrels;

transferring said photo-resist pattern into said planarization layer through directional etching of said planarization layer utilizing said second hard-mask layer as an etch-stop layer.

11. The method of claim 8 , further comprising forming a photo-resist mask to cover rest of said set of sidewall spacers except said at least a portion of said set of sidewall spacers, before image of said at least a portion of said set of sidewall spacers is transferred to said second hard-mask layer.

12. The method of claim 11 , further comprising removing said sidewall spacers remaining on top of said device pattern of said second hard-mask layer and the rest of said second hard-mask layer through a burn-off process, said burn-off process comprises subjecting said sidewall spacers to a plasma environment, wherein said plasma environment comprises fluorocarbon gas of CF4 or C4F8, hydrogenated fluorocarbon gas CHxFy, and diluting gas of Ar or nitrogen.

13. The method of claim 8 , wherein said planarization layer between said first and said second hard-mask layer is an amorphous carbon layer.

14. The method of claim 8 , wherein said second hard-mask layer has a thickness that is equal or less than that of said first hard-mask layer, and wherein said planarization layer has a thickness ranging from about 10 nm to about 100 nm.

15. A method of transferring sidewall spacer image comprising:

forming a set of sidewall spacers next to sidewalls of a corresponding set of mandrels, said set of sidewall spacers being directly on top of a second hard-mask layer;

transferring image of a portion of said set of sidewall spacers to said second hard-mask layer to form a device pattern;

transferring said device pattern from said second hard-mask layer to a first hard-mask layer; and

transferring said device pattern from said first hard-mask layer subsequently to a substrate underneath said first hard-mask layer,

wherein said first and second hard-mask layers are titanium-nitride layers separated by a planarization layer, said planarization layer is of a material that is able to withstand a process of depositing said second titanium-nitride layer on top thereof without causing decomposition.

16. The method of claim 15 , wherein forming said set of sidewall spacers comprises:

depositing a planarization layer on top of said second hard-mask layer;

etching said planarization layer to form thereby said set of mandrels;

depositing a conformal layer of dielectric material covering said set of mandrels, said dielectric material being suitable for said sidewall spacers; and

performing directional etching to remove said conformal layer thereby leaving only said set of sidewall spacers at sidewalls of said set of mandrels.

17. The method of claim 16 , wherein forming said set of mandrels comprises:

depositing an anti-reflective coating layer on top of said planarization layer;

exposing lithographically a photo-resist layer on top of said anti-reflective coating layer to form a photo-resist pattern of said set of mandrels;

transferring said photo-resist pattern into said planarization layer through a directional etching process utilizing said second hard-mask layer as an etch-stop layer.

18. The method of claim 15 , further comprising, before image of said at least a portion of said set of sidewall spacers being transferred to said second hard-mask layer, forming a photo-resist mask that covers rest of said set of sidewall spacers except said at least a portion of said set of sidewall spacers.

19. The method of claim 18 , further comprising removing said sidewall spacers remaining on top of said device pattern of said second hard-mask layer and the rest of said second hard-mask layer through a burn-off process, said burn-off process comprises subjecting said sidewall spacers to a plasma environment, wherein said plasma environment comprises fluorocarbon gas of CF4 or C4F8, hydrogenated fluorocarbon gas CHxFy, and diluting gas of Ar or nitrogen.

20. The method of claim 15 , wherein said planarization layer between said first and said second hard-mask layer is an amorphous carbon layer.

21. The method of claim 15 , wherein said second hard-mask layer has a thickness that is equal or less than that of said first hard-mask layer, and wherein said planarization layer has a thickness ranging from about 10 nm to about 100 nm.