IP Library Granted Patent US 8,884,266
Granted Patent B2
US 8,884,266 · App. 13/495,045 · Granted Nov 11, 2014

Thin film transistor using a carbon nanotube as a channel and a display device including the same

Inventors: Sang Ho Park (Suwon-si, KR); Young Ki Shin (Seoul, KR); Yoon Ho Khang (Yongin-si, KR); Joo Hyung Lee (Seoul, KR); Hyung Woo Lee (Anyang-si, KR); Seung Hun Hong (Seoul, KR)
Assignees: Samsung Display Co., Ltd.; SNU R&DB Foundation
H01L51/0558H01L27/3274H01L51/0048
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Quick Facts
Patent No.
US 8,884,266
App. No.
13/495,045
Granted
Nov 11, 2014
Kind
B2
Abstract

A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.

Claims (35)

1. A thin film transistor, comprising:

a gate electrode configured to receive a control voltage;

a source electrode insulated from the gate electrode, and configured to receive an input voltage;

a drain electrode insulated from the gate electrode, and configured to receive an output voltage;

at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other; and

at least one floating electrode directly contacting the carbon nanotube patterns to each other.

2. The thin film transistor of claim 1 , wherein the total number of floating electrodes is one less than the total number of carbon nanotube patterns.

3. The thin film transistor of claim 1 , wherein when the thin film transistor is in an on state, the voltage input to the source electrode is transferred to the drain electrode through the carbon nanotube patterns and the floating electrode.

4. The thin film transistor of claim 1 , wherein each of the carbon nanotube patterns comprises a hydrophilic pattern and a carbon nanotube formed thereon.

5. The thin film transistor of claim 4 , wherein the hydrophilic patterns of the carbon nanotube patterns are separated from each other.

6. The thin film transistor of claim 4 , further comprising:

hydrophobic patterns formed on the same layer as the hydrophilic patterns, except where the hydrophilic patterns are formed.

7. The thin film transistor of claim 1 , further comprising:

a gate insulating layer insulating the gate electrode from the source electrode and the drain electrode.

8. The thin film transistor of claim 7 , wherein the gate insulating layer is formed on the gate electrode, the carbon nanotube patterns are formed on the gate insulating layer, and the source electrode, the floating electrode, and the drain electrode are formed on the carbon nanotube patterns.

9. A display device, comprising:

a plurality of pixels, wherein a first pixel comprises a switching element and a pixel electrode connected thereto;

a gate driver configured to apply a gate voltage to the first pixel;

a data driver configured to apply a data voltage to the first pixel; and

a signal controller configured to control the gate driver and the data driver,

wherein the switching element is a thin film transistor and the thin film transistor comprises:

a gate electrode configured to receive the gate voltage;

a source electrode insulated from the gate electrode, and configured to receive the data voltage;

a drain electrode insulated from the gate electrode and configured to output the data voltage to the pixel electrode;

at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other; and

at least one floating electrode connecting the carbon nanotube patterns to each other.

10. The display device of claim 9 , wherein the total number of floating electrodes is one less than the total number of carbon nanotube patterns.

11. The display device of claim 9 , wherein when the thin film transistor is in a turn-on state, the data voltage received by the source electrode is transferred to the drain electrode through the carbon nanotube patterns and the floating electrode.

12. The display device of claim 9 , wherein each of the carbon nanotube patterns comprises a hydrophilic pattern and a carbon nanotube formed thereon.

13. The display device of claim 12 , wherein the hydrophilic patterns are separated from each other.

14. The display device of claim 12 , further comprising:

hydrophobic patterns formed on the same layer as the hydrophilic patterns, except where the hydrophilic patterns are formed.

15. The display device of claim 9 , further comprising:

a gate insulating layer insulating the gate electrode from the source electrode and the drain electrode.

16. The display device of claim 15 , wherein the gate insulating layer is formed on the gate electrode, the carbon nanotube patterns are formed on the gate insulating layer, and the source electrode, the floating electrode, and the drain electrode are formed on the carbon nanotube patterns.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2012
From: PARK, SANG HO; SHIN, YOUNG KI; KHANG, YOON HO; LEE, JOO HYUNG; LEE, HYUNG WOO; HONG, SEUNG HUN
To: SAMSUNG DISPLAY CO., LTD.; SNU R&DB FOUNDATION
Reel/Frame 028364/0524 →
Priority Claims (1)
KR 10-2011-0119545 · Nov 16, 2011 · national
Continuity (1)
Related Publication 20130119345A1 · May 16, 2013