Apparatus for plasma processing and method for plasma processing
There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.
1. An apparatus for plasma processing, comprising:
a first electrode unit configured to inject a first gas;
a substrate supporter spaced apart from the first electrode unit for supporting a substrate; and
a second electrode unit spaced apart from the substrate supporter to be arranged at a backside of the substrate, the second electrode unit configured to inject a second gas to form plasma between the second electrode unit and the substrate supported on the substrate supporter;
a plurality of discharging nozzles formed in the second electrode unit to inject the second gas toward the backside of the substrate;
an insulating ring formed along a peripheral portion of the second electrode unit to concentrate plasma formed between the second electrode unit and the substrate;
a discharging member integrally formed with the second electrode unit at the peripheral portion of the second electrode unit and extending toward the first electrode to inject a third gas toward a center portion of the second electrode unit or a center of the substrate and to confine the second gas;
wherein the substrate supporter comprises:
one or more arms configured to receive the substrate; and
a supporting part extending from the arm toward a substrate seating position of the substrate;
wherein the supporting part comprises:
a supporting ring configured to connect the arms and having an opening;
an auxiliary ring disposed at the opening of the supporting ring; and
an auxiliary arm connected to the auxiliary ring and configured to move the auxiliary ring to the opening of the supporting ring so that the supporting ring and the auxiliary ring form a closed portion;
wherein the discharging member has a bent shape, wherein a top portion of the discharging member is angled toward the center portion of the second electrode unit to cause the third gas to be injected toward the center portion of the second electrode unit.
2. The apparatus of claim 1 , comprising:
a chamber having the first electrode, the substrate supporter and second electrode therein;
wherein the arm of the substrate supporter extends from an upper part of the chamber or a lower part of the chamber.
3. The apparatus of claim 2 , wherein the substrate supporter is configured to support the substrate by using an upwardly and downwardly movable arm extending from an upper or lower portion of the chamber, or by using a plurality of upwardly and downwardly movable pins disposed at the lower portion of the chamber.
4. The apparatus of claim 1 , wherein the supporting ring further comprises a plurality of pins extending in a substrate seating direction.
5. The apparatus of claim 1 , further comprising a driving unit disposed at at least one of the first electrode, the second electrode, and the substrate supporter for adjusting a distance between the first electrode and the substrate supporter or a distance between the second electrode and the substrate supporter.
6. The apparatus of claim 1 , wherein the first gas is a non-reactive gas, and the second gas is a reactive gas.
7. The apparatus of claim 1 , wherein the first electrode unit comprises a discharge nozzle configured to allow the first gas to flow toward a peripheral region of the substrate, the discharge nozzle being sloped toward the peripheral region of the substrate.
8. The apparatus of claim 7 , wherein the discharge nozzle of the first electrode unit diverges or converges toward the peripheral region of the substrate.
9. The apparatus of claim 7 , wherein the discharge nozzle of the first electrode unit comprises a plurality of nozzles branching from a supply nozzle, and the nozzles are arranged to be equiangular to each other with respect to the supply nozzle or formed in an annular shape concentrically around the supply nozzle.