IP Library Granted Patent US 8,889,451
Granted Patent B2
US 8,889,451 · App. 13/400,966 · Granted Nov 18, 2014

MEMS pressure transducer assembly and method of packaging same

Inventors: Mark E. Schlarmann (Chandler, AZ); Yizhen Lin (Gilbert, AZ)
Assignee: Freescale Semiconductor, Inc.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,889,451
App. No.
13/400,966
Granted
Nov 18, 2014
Kind
B2
Abstract

An assembly ( 20 ) includes a MEMS die ( 22 ) having a pressure transducer device ( 40 ) formed on a substrate ( 44 ) and a cap layer ( 38 ). A packaging process ( 74 ) entails forming the device ( 40 ) on the substrate, creating an aperture ( 70 ) through a back side ( 58 ) of the substrate ( 44 ) underlying a diaphragm ( 46 ) of the device ( 40 ), and coupling a cap layer ( 38 ) to the front side of the substrate ( 44 ) overlying the device ( 40 ). A trench ( 54 ) is produced extending through both the cap layer ( 38 ) and the substrate ( 44 ), and surrounds a cantilevered platform ( 48 ) at which the diaphragm ( 46 ) resides. The die ( 22 ) is suspended above a substrate ( 26 ) so that a clearance space ( 60 ) is formed between the platform ( 48 ) and the substrate ( 26 ). The diaphragm ( 46 ) is exposed to an external environment ( 68 ) via the aperture ( 70 ) and the space ( 60 ), and an external port.

Claims (39)

1. A method of making a microelectromechanical systems (MEMS) device package comprising:

forming a MEMS device on a front side of a device substrate;

removing a portion of said device substrate to form an aperture extending through said device substrate underlying an active region of said MEMS device;

coupling a cap layer to said front side of said device substrate overlying said MEMS device; and

removing a section of each of said cap layer and said device substrate partially surrounding said MEMS device to form a cantilevered platform at which said active region resides, wherein at least a portion of said cap layer is attached to said cantilevered platform to form a sealed cavity in which said active region is located.

2. A method as claimed in claim 1 wherein said forming said MEMS device produces a pressure transducer having a movable diaphragm in said active region, said movable diaphragm being exposed to an external environment via said aperture.

3. A method as claimed in claim 2 wherein following said removing operation, said movable diaphragm is movable relative to said cantilevered platform.

4. A method as claimed in claim 1 wherein said operation of removing said section comprises etching through an entire thickness of said cap layer and said device substrate to form said cantilevered platform having a sole attachment point to said device substrate surrounding said cantilevered platform.

5. A method as claimed in claim 1 further comprising attaching a back side of said device substrate to a base substrate, said attaching operation including forming a clearance space between said cantilevered platform and said base substrate so that said cantilevered platform is suspended above said base substrate.

6. A method as claimed in claim 5 wherein said forming said clearance space comprises providing a cutout in said base substrate underlying said cantilevered platform.

7. A method as claimed in claim 6 wherein said cutout extends through an entirety of said base substrate so that said active region is exposed to an external environment via said cutout, said clearance space, and said aperture.

8. A method as claimed in claim 5 wherein said forming said clearance space comprises applying an adhesive to attach said back side of said device substrate to said base substrate, said adhesive having a thickness sufficient to produce said clearance space underlying said cantilevered platform.

9. A method as claimed in claim 5 wherein said operation of removing said section produces a trench extending through said cap layer and said device substrate surrounding said cantilevered platform, and said clearance space and said aperture are in communication with said trench so that said active region is exposed to an external environment via said trench, said clearance space, and said aperture.

10. A method as claimed in claim 9 further comprising:

positioning a plug member over said trench and said cap layer overlying said cantilevered platform;

following said positioning operation, applying a molding compound to substantially encapsulate said MEMS device, said cap layer, said device substrate, and said base substrate; and

following said applying operation, replacing said plug member with a protective cap over said trench and said cap layer overlying said cantilevered platform, said protective cap including a port extending through said cap to expose said trench to said external environment.

11. A method as claimed in claim 1 wherein:

said forming operation includes forming conductive traces at said front side of said device substrate, and said cap layer covers said conductive traces such that said conductive traces reside in said sealed cavity.

12. A method of making a microelectromechanical systems (MEMS) device package comprising:

forming a MEMS device on a front side of a device substrate;

removing a portion of said device substrate to form an aperture extending through said device substrate underlying an active region of said MEMS device;

coupling a cap layer to said front side of said device substrate overlying said MEMS device;

removing a section of each of said cap layer and said device substrate by etching through an entirety of a thickness of said cap layer and said device substrate partially surrounding said MEMS device to form a cantilevered platform at which said active region resides, wherein at least a portion of said cap layer is coupled to said cantilevered platform to form a sealed cavity in which said active region is located; and

attaching a back side of said device substrate to a base substrate, said attaching operation including forming a clearance space between said cantilevered platform and said base substrate so that said cantilevered platform is suspended above said base substrate.

13. A method as claimed in claim 12 wherein said forming said clearance space comprises providing a cutout in said base substrate underlying said cantilevered platform, said cutout extending through an entire thickness said base substrate so that said active region is exposed to an external environment via said cutout, said clearance space, and said aperture.

14. A method as claimed in claim 12 wherein said operation of removing said section produces a trench extending through said cap layer and said device substrate surrounding said cantilevered platform, and said clearance space and said aperture are in communication with said trench so that said active region is exposed to an external environment via said trench, said clearance space, and said aperture.

15. A method as claimed in claim 12 wherein following said removing operation, said movable diaphragm is movable relative to said cantilevered platform.

16. A method of making a microelectromechanical systems (MEMS) device package comprising:

forming a MEMS pressure transducer having a movable diaphragm on a front side of a device substrate;

removing a portion of said device substrate to form an aperture extending through said device substrate underlying an active region of said MEMS device, said movable diaphragm being located in said active region;

coupling a cap layer to said front side of said device substrate overlying said MEMS device;

removing a section of each of said cap layer and said device substrate partially surrounding said MEMS device to form a cantilevered platform at which said active region resides, wherein following said removing operation, said movable diaphragm is movable relative to said cantilevered platform; and

attaching a back side of said device substrate to a base substrate, said attaching operation including forming a clearance space between said cantilevered platform and said base substrate so that said cantilevered platform is suspended above said base substrate.

17. A method as claimed in claim 16 wherein said operation of removing said section comprises etching through an entire thickness of said cap layer and said device substrate to form said cantilevered platform having a sole attachment point to said device substrate surrounding said cantilevered platform.

18. A method as claimed in claim 16 wherein said operation of removing said section produces a trench extending through said cap layer and said device substrate surrounding said cantilevered platform, and said clearance space and said aperture are in communication with said trench so that said movable diaphragm is exposed to an external environment via said trench, said clearance space, and said aperture.

19. A method as claimed in claim 18 wherein:

said forming operation includes forming conductive traces at said front side of said device substrate, and said cap layer covers said conductive traces such that said conductive traces reside in said sealed cavity, said sealed cavity being isolated from said external environment.

20. A method as claimed in claim 16 wherein following said removing operation, at least a portion of said cap layer is coupled to said cantilevered platform to form a sealed cavity in which said movable diaphragm is located.

Assignments (31)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0241. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 5, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041260/0850 →
MERGER Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040652/0241 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0521 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0455 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0476 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 030256/0670 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030256/0582 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030256/0655 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 21, 2012
From: SCHLARMANN, MARK E.; LIN, YIZHEN
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 027735/0400 →
Continuity (1)
Related Publication 20130214365A1 · Aug 22, 2013