Thermoelectric element module and manufacturing method
A thermoelectric element module has P-type thermoelectric materials and N-type thermoelectric materials alternately joined between a pair of substrates. The thermoelectric materials include a thermoelectric mixture powder in which a thermoelectric material powder and a low-melting metal powder are mixed at a predetermined ratio. The thermoelectric mixture powder is thermally treated at a temperature lower than a melt point of the thermoelectric material, the thermoelectric mixture powder is formed as the low-melting metal is melted, and at the same time both ends of the thermoelectric materials are joined to the pair of substrates. A method for manufacturing such a thermoelectric material is also provided.
1. A method for manufacturing a thermoelectric element in which P-type thermoelectric materials and N-type thermoelectric materials are alternately joined between a pair of substrates, the method comprising:
(a) preparing a P-type thermoelectric mixture powder and a N-type thermoelectric mixture powder in which a thermoelectric material powder and a low-melting metal powder are mixed at a predetermined ratio, respectively;
(b) locating a support having a plurality of holes with a predetermined pattern on a first substrate;
(c) filling the corresponding holes of the support with the P-type thermoelectric mixture powder and the N-type thermoelectric mixture powder;
(d) packing the P-type and N-type thermoelectric mixture powders filled in the holes;
(e) separating the support from the first substrate;
(f) locating a second substrate to the other side of the thermoelectric mixture powders to be opposite to the first substrate; and
(g) thermally treating the thermoelectric mixture powders at a temperature lower than a melt point of the thermoelectric material to join the thermoelectric mixture powders to the first and second substrates.
2. A method for manufacturing a thermoelectric element in which P-type thermoelectric materials and N-type thermoelectric materials are alternately joined between a pair of substrates, the method comprising:
(a) preparing a P-type thermoelectric mixture powder and a N-type thermoelectric mixture powder by mixing a thermoelectric material powder and a low-melting metal powder at a predetermined ratio, respectively;
(b) locating a support having a plurality of holes with a predetermined pattern on a first substrate;
(c) filling the corresponding holes of the support with the P-type thermoelectric mixture powder and the N-type thermoelectric mixture powder and packing the P-type thermoelectric mixture powder and the N-type thermoelectric mixture powder filled in the holes;
(d) thermally treating the thermoelectric mixture powders at a temperature lower than a melt point of the thermoelectric material to join the thermoelectric mixture powders to the first substrate by means of the melted low-melting metal;
(e) separating the support from the first substrate in a state that the thermoelectric mixture powders are adhered to the first substrate;
(f) locating a second substrate to the other side of the thermoelectric mixture powders to be opposite to the first substrate; and
(g) joining the other side of the thermoelectric mixture powders to the second substrate.
3. The method for manufacturing a thermoelectric element according to claim 1 ,
wherein the low-melting metal powder includes any one selected from the group consisting of Bi, Tl, Sn, P, Pb and Cd.
4. The method for manufacturing a thermoelectric element according to claim 1 ,
wherein the thermoelectric mixture powder includes a thermoelectric material powder and about 0.25 to 10 weight % of low-melting metal powder.
5. The method for manufacturing a thermoelectric element according to claim 1 ,
wherein, in the step (b), the support includes a first support used for filling the P-type thermoelectric mixture powder and a second support used for filling the N-type thermoelectric mixture powder separately.
6. The method for manufacturing a thermoelectric element according to claim 1 ,
wherein the first and second substrates include an insulation member and a plurality of electrodes joined to the insulation member with a predetermined pattern, respectively.
7. The method for manufacturing a thermoelectric element according to claim 6 ,
wherein the insulation member includes aluminum oxide, and the electrode includes copper.
8. The method for manufacturing a thermoelectric element according to claim 1 , further comprising:
forming a buffer layer on at least one surface of the first and second substrates.
9. The method for manufacturing a thermoelectric element according to claim 8 ,
wherein the buffer layer includes nickel.
10. The method for manufacturing a thermoelectric element according to claim 2 ,
wherein the low-melting metal powder includes any one selected from the group consisting of Bi, Tl, Sn, P, Pb and Cd.
11. The method for manufacturing a thermoelectric element according to claim 2 ,
wherein the thermoelectric mixture powder includes a thermoelectric material powder and about 0.25 to 10 weight % of low-melting metal powder.
12. The method for manufacturing a thermoelectric element according to claim 2 ,
wherein, in the step (b), the support includes a first support used for filling the P-type thermoelectric mixture powder and a second support used for filling the N-type thermoelectric mixture powder separately.
13. The method for manufacturing a thermoelectric element according to claim 2 ,
wherein the first and second substrates include an insulation member and a plurality of electrodes joined to the insulation member with a predetermined pattern, respectively.
14. The method for manufacturing a thermoelectric element according to claim 13 ,
wherein the insulation member includes aluminum oxide, and the electrode includes copper.
15. The method for manufacturing a thermoelectric element according to claim 2 , further comprising:
forming a buffer layer on at least one surface of the first and second substrates.
16. The method for manufacturing a thermoelectric element according to claim 15 ,
wherein the buffer layer includes nickel.