MIM capacitors with improved reliability
A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.
1. A method for forming a semiconductor structure, the method comprising:
forming a bottom electrode comprising:
depositing a metal layer; and
performing a nitridation on a top layer of the metal layer to form a metal nitride layer, wherein a bottom layer of the metal layer is not nitridated;
treating the metal nitride layer in an oxygen-containing environment to convert the metal nitride layer into a buffer layer;
forming an insulating layer on the buffer layer; and
forming a top electrode over the insulating layer.
2. The method of claim 1 , wherein the step of treating the metal nitride layer comprises soaking the metal nitride layer in an ozone-containing environment.
3. The method of claim 2 , wherein the ozone-containing environment has an ozone flow rate of greater than about 500 sccm.
4. The method of claim 2 , wherein the step of soaking the metal nitride layer is performed at a room temperature.
5. The method of claim 1 , wherein the step of treating the metal nitride layer comprises thermally treating the metal nitride layer.
6. The method of claim 1 , wherein the step of treating the metal nitride layer comprises plasma treating.
7. The method of claim 1 , wherein the buffer layer physically adjoins the bottom layer of the metal layer and the insulating layer, and wherein the insulating layer physically adjoins the top electrode.
8. The method of claim 1 further comprising:
forming a photo resist on the bottom electrode;
patterning the bottom electrode; and
ashing the photo resist before the step of treating the metal nitride layer.
9. The method of claim 8 , wherein an interfacial layer is formed by the step of ashing, and wherein the interfacial layer has a thickness of less than about 15 Å.
10. The method of claim 8 , wherein the step of ashing is performed in a non-oxygen environment.
11. A method for forming a capacitor, the method comprising:
forming a bottom electrode comprising:
depositing a metal layer; and
performing a nitridation on a top layer of the metal layer to form a metal nitride layer, wherein a bottom layer of the metal layer is not nitridated;
annealing the bottom electrode in an oxygen-containing environment to convert the metal nitride layer into a buffer layer, wherein the oxygen-containing environment comprises a gas or a plasma selected from the group consisting essentially of O 2 , O 3 (ozone), and; combinations thereof;
forming an insulating layer on the buffer layer; and
forming a top electrode on the insulating layer.
12. The method of claim 11 , wherein the gas in the oxygen-containing environment comprises ozone.
13. The method of claim 11 , wherein the metal nitride layer comprises a metal nitride selected from the group consisting essentially of titanium nitride, tantalum nitride, tungsten nitride, and combinations thereof.
14. The method of claim 11 , wherein the step of depositing the metal layer is performed using a method selected from the group consisting essentially of atomic layer deposition and metal organic chemical vapor deposition.
15. A method for forming a semiconductor structure, the method comprising:
providing a semiconductor substrate;
forming a transistor at a surface of the semiconductor substrate, wherein the transistor comprises a gate over the semiconductor substrate, and a drain and a source adjacent the gate;
forming a first inter-layer dielectric (ILD) over the transistor;
forming a first contact and a second contact in the first ILD, wherein the first and the second contacts are connected to the drain and source, respectively;
forming a second ILD over the first ILD;
forming an opening in the second ILD; and
forming a capacitor in the opening comprising:
forming a bottom electrode layer electrically connected to the first contact, wherein the step of forming the bottom electrode layer comprises:
depositing a metal layer; and
performing a nitridation on a top layer of the metal layer to form a metal nitride layer, wherein a bottom layer of the metal layer is not nitridated;
forming a photo resist on the bottom electrode layer;
patterning the bottom electrode layer to form a bottom electrode;
ashing the photo resist;
treating the bottom electrode in an oxygen-containing gas or plasma after the step of ashing to convert the metal nitride layer into a buffer layer;
forming an insulating layer on the buffer layer; and
forming a top electrode over the insulating layer.
16. The method of claim 15 , wherein the step of treating comprises soaking the bottom electrode in an ozone-containing environment.
17. The method of claim 15 , wherein the step of treating comprises thermally treating the bottom electrode in an oxygen-containing environment.
18. The method of claim 15 , wherein the step of ashing the photo resist is performed at a temperature lower than about 300° C.