Light emitting diodes and methods of fabricating the same
View Patent ↗Provided is a light emitting diode, including a sub-mount structure including a first substrate and electrode portions provided on the first substrate, and a light emitting structure mounted on the sub-mount structure to include a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The electrode portions may include a first electrode portion and a second electrode portion connected to the first and second semiconductor layers, respectively, and each of the first and second electrode portions may include a first metal layer, a graphene layer, and a second metal layer sequentially provided on the first substrate.
1. A light emitting diode (LED), comprising:
a sub-mount structure including a first substrate and electrode portions provided on the first substrate; and
a light emitting structure mounted on the sub-mount structure to include a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer,
wherein the electrode portions comprise a first electrode portion and a second electrode portion connected to the first and second semiconductor layers, respectively, and
each of the first and second electrode portions comprises a first metal layer, a graphene layer, and a second metal layer sequentially provided on the first substrate.
2. The LED of claim 1 , wherein the light emitting structure further comprises a second substrate on the first semiconductor layer, and
an upper portion of the second substrate is formed to have concavo-convex patterns.
3. The LED of claim 2 , wherein the light emitting structure further comprises an electrode connecting portion connecting a bottom surface of the first semiconductor layer to the first electrode portion.
4. The LED of claim 1 , wherein the second metal layer is a mesh-shaped transparent electrode.
5. The LED of claim 4 , wherein the second metal layer is thinner than the first metal layer.
6. The LED of claim 1 , wherein the light emitting structure comprises a plurality of light emitting structures,
the first semiconductor layers of the plurality of the light emitting structures are connected in common to the first electrode portion,
the second semiconductor layers of the plurality of the light emitting structures are connected in common to the second electrode portion.
7. The LED of claim 6 , wherein the sub-mount structure further comprises connection pads extending from the first and second electrode portions, respectively.