IP Library Granted Patent US 8,890,781
Granted Patent B2
US 8,890,781 · App. 12/906,538 · Granted Nov 18, 2014

Display device and electronic device including display device

Inventors: Shunpei Yamazaki (Setagaya, JP); Jun Koyama (Sagamihara, JP); Hiroyuki Miyake (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/1225
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Quick Facts
Patent No.
US 8,890,781
App. No.
12/906,538
Granted
Nov 18, 2014
Kind
B2
Abstract

Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

Claims (49)

1. A display device comprising:

a power supply line;

a light-emitting element configured to receive power from the power supply line;

a first transistor for electrically connecting the power supply line and the light-emitting element;

a signal line for supplying a video signal;

a second transistor for electrically connecting the signal line and a gate of the first transistor;

wherein a channel formation region in the second transistor comprises an oxide semiconductor layer having a band gap of greater than or equal to 2 eV and a hydrogen concentration of less than or equal to 5×10 19 /cm 3 , and

wherein when the second transistor is off state, a drain current of the second transistor is less than or equal to 1×10 −16 A/μm, and the second transistor is configured to hold the first transistor in an on state and connect the power supply line to the light-emitting element to display a still image.

2. The display device according to claim 1 , wherein the power supply line is configured to supply a pulsed DC power.

3. The display device according to claim 1 , wherein a carrier concentration of the oxide semiconductor layer is less than 1×10 14 /cm 3 .

4. The display device according to claim 1 , wherein a period in which the still image is displayed includes a period in which output of a scan line signal is stopped.

5. The display device according to claim 1 ,

wherein the light-emitting element comprising:

a pair of electrodes; and

a layer containing a light-emitting organic substance between the pair of electrodes.

6. The display device according to claim 1 , wherein a light-storing layer is included.

7. An electronic device comprising the display device according to claim 1 .

8. The display device according to claim 1 , wherein the display device is lighting device.

9. A display device comprising;

a signal line;

a scan line;

a power supply line to which pulsed DC power is supplied; and

a pixel portion, the pixel portion comprising:

a first transistor;

a second transistor; and

a light-emitting element,

wherein a gate of the second transistor is electrically connected to the scan line, a first electrode of the second transistor is electrically connected to the signal line, and a second electrode of the second transistor is electrically connected to a gate of the first transistor,

wherein a first electrode of the film transistor is electrically connected to the power supply line, and the second electrode of the first transistor is electrically connected to a first electrode of the light-emitting element,

wherein a channel formation region in the second transistor comprises an oxide semiconductor layer having a band gap of greater than or equal to 2 eV and a hydrogen concentration of less than or equal to 5×10 19 /cm 3 , and

wherein when the second transistor is off state, a drain current of the second transistor is less than or equal to 1×10 −16 A/μm, and the second transistor is configured to hold the first transistor in an on state and connect the power supply line to the light-emitting element to display a still image.

10. The display device according to claim 9 , wherein a carrier concentration of the oxide semiconductor layer is less than 1×10 14 /cm 3 .

11. The display device according to claim 9 , wherein a period in which the still image is displayed includes a period in which output of a scan line signal is stopped.

12. The display device according to claim 9 ,

wherein the light-emitting element comprising:

a pair of electrodes; and

a layer containing a light-emitting organic substance between the pair of electrodes.

13. The display device according to claim 9 , wherein a light-storing layer is included.

14. An electronic device comprising the display device according to claim 9 .

15. The display device according to claim 9 , wherein the display device is an electronic paper.

16. A display device comprising;

a power supply line;

a light-emitting element configured to receive power from the power supply line;

a first transistor for electrically connecting the power supply line and the light-emitting element;

a signal line for supplying a video signal;

a second transistor for electrically connecting the signal line and a gate of the first transistor;

wherein a channel formation region in the second transistor comprises an oxide semiconductor layer having a band gap of greater than or equal to 2 eV and a hydrogen concentration of less than or equal to 5×10 19 /cm 3 ,

wherein when the second transistor is off state, a drain current of the second transistor is less than or equal to 1×10 −16 A/μm, and the second transistor is configured to hold the first transistor in an on state and connect the power supply line to the light-emitting element to display a still image, and

wherein the oxide semiconductor layer comprises micro crystalline portion.

17. The display device according to claim 16 , wherein grain diameter of the micro crystalline portion is greater than or equal to 1 nm and equal to or less than 20nm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2010
From: YAMAZAKI, SHUNPEI; KOYAMA, JUN; MIYAKE, HIROYUKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 025153/0751 →
Priority Claims (2)
JP 2009-242757 · Oct 21, 2009 · national
JP 2009-278997 · Dec 8, 2009 · national
Continuity (1)
Related Publication 20110090207A1 · Apr 21, 2011