System and method for a micro ring laser

1. An electrically pumped hybrid III-V group and silicon laser system, comprising:

a silicon micro-ring resonator;

a quantum well formed of a III-V group semiconductor material that is optically coupled with the silicon micro-ring resonator to provide optical gain;

a first buffer formed of a III-V group semiconductor material doped with a first type of carrier, wherein the first buffer is optically coupled to the quantum well and the first buffer forms a ring with a cross section that is substantially triangular shaped or substantially trapezoidal shaped, wherein a trapezoidal shaped cross section comprises a quadrilateral with two parallel sides and two non-parallel sides;

a ring electrode coupled to the first buffer, wherein the first buffer enables the ring electrode to be substantially isolated from an optical mode of the micro-ring resonator, wherein the ring electrode contacts the first buffer continuously around an edge of the ring formed by the first buffer;

a second buffer formed of III-V group semiconductor material doped with a second type of carrier having a charge opposite the first type of carrier, the second buffer being located between the quantum well and the silicon micro-ring resonator; and

a center electrode that contacts the second buffer to allow carriers to be injected into the quantum well by applying a bias potential between the center electrode and the ring electrode;

wherein an imaginary cylinder has a center positioned at the center of the silicon micro-ring resonator and the imaginary cylinder has a radius defined by an innermost edge of the silicon micro-ring resonator, wherein the center electrode is confined within the imaginary cylinder.

2. The system of claim 1 , wherein a height of the silicon micro-ring resonator, the second buffer, the quantum well, and the first buffer is selected to enable a single fundamental transverse-electric (TE) mode of laser light to propagate within the resonator, with a maximum amount of electromagnetic energy in the TE-mode located within the quantum well to provide increased amplification of laser light within the quantum well.

3. The system of claim 1 , wherein the first buffer is comprised of a plurality of levels, with each increasing level having a decreasing length.

4. The system of claim 3 , wherein the first buffer is formed by etching a plurality of steps to form the plurality of levels.

5. The system of claim 1 , further comprising an under-cladding layer located below the silicon micro-ring resonator, wherein the under-cladding layer is formed of a material having an index of refraction that is less than the index of refraction of the silicon micro-ring resonator and that is substantially optically transparent at a wavelength of laser light within the micro-ring resonator.

6. The system of claim 1 , further comprising an optical waveguide located sufficiently close to the silicon micro-ring resonator to enable laser light from the micro-ring resonator to couple evanescently to the optical waveguide.

7. A method for forming an electrically pumped hybrid III-V group and silicon laser for stimulating light of a selected wavelength, comprising:

forming a silicon micro-ring resonator on an under-cladding having an index of refraction that is less than an index of refraction of the silicon micro-ring resonator;

joining a first buffer layer with the silicon micro-ring resonator, wherein the first buffer layer is formed of a III-V group semiconductor material doped with a first type of carrier;

attaching a quantum well to the first buffer layer, with the quantum well being optically coupled to the silicon micro-ring resonator;

connecting a second buffer layer to the quantum well, wherein the second buffer layer is formed of III-V group semiconductor material doped with a second type of carrier having a charge opposite the first type of carrier and the second buffer layer forms a ring and has a cross section with a substantially triangular shape or a substantially trapezoidal shape, wherein a trapezoidal shaped cross section comprises a quadrilateral with two parallel sides and two non-parallel sides, the second buffer having a wide area coupled to the quantum well and a narrow area;

joining a ring electrode to the narrow area of the second buffer layer to form a continuous junction between the ring formed by the second buffer layer and the ring electrode; and

including a center electrode near a center of the silicon micro-ring resonator to enable carriers to be injected into the quantum well between the center electrode and the ring electrode to provide amplification of the light of the selected wavelength;

wherein an imaginary cylinder has a center positioned at the center of the silicon micro-ring resonator and the imaginary cylinder has a radius defined by an innermost edge of the silicon micro-ring resonator, wherein the center electrode is confined within the imaginary cylinder.

8. A method as in claim 7 , further comprising forming the shape of the second buffer layer by etching a plurality of levels, with each increasing level having a decreasing length.

9. A method as in claim 7 , further comprising forming the shape of the second buffer layer shaped with a narrowed top portion to direct a single fundamental TE-mode such that the maximum amount of electromagnetic energy in the single fundamental TE-mode is located within the quantum well to provide increased gain of the light within the quantum well.

10. A method as in claim 7 , further comprising positioning an optical waveguide sufficiently close to the silicon micro-ring resonator to enable the light within the silicon micro-ring resonator to evanescently couple to the optical waveguide to enable laser light to be directed from the silicon micro-ring resonator.

11. An electrically pumped hybrid III-V group and silicon laser system, comprising:

a silicon micro-ring resonator;

a quantum well formed of a III-V group semiconductor material that is optically coupled with the silicon micro-ring resonator to provide optical gain;

a first buffer formed of a III-V group semiconductor material doped with a first type of carrier, wherein the first buffer is coupled to the quantum well, wherein the first buffer forms a ring with a cross section that is substantially triangular shaped or substantially trapezoidal shaped, wherein a trapezoidal shaped cross section comprises a quadrilateral with two parallel sides and two non-parallel sides;

a second buffer formed of a III-V group semiconductor material doped with a second type of carrier, wherein the second buffer is located between the quantum well and the silicon micro-ring resonator;

a center electrode located at a center of the silicon micro-ring resonator and contacting the second buffer, wherein the second buffer enables the center electrode to be substantially isolated from an optical mode of the micro-ring resonator;

wherein an imaginary cylinder has a center positioned at the center of the silicon micro-ring resonator and the imaginary cylinder has a radius defined by an innermost edge of the silicon micro-ring resonator, wherein the center electrode is confined within the imaginary cylinder.

12. The system of claim 11 , further comprising an outer electrode coupled to the first buffer and located a selected distance from the micro-ring resonator.

13. The system of claim 11 , further comprising an optical waveguide located sufficiently close to the silicon micro-ring resonator to enable laser light from the micro-ring resonator to couple evanescently to the optical waveguide.