Organic light-emitting display having light blocking layer formed over pixel defining layer
An organic light-emitting display includes a substrate including a pixel region and a transistor region; a first transparent electrode and a second transparent electrode formed over the pixel region and the transistor region of the substrate, respectively; a gate electrode formed over the second transparent electrode; a gate insulating film formed over the gate electrode; a semiconductor layer formed over the gate insulating film; a source and drain electrode having an end connected to the semiconductor layer and the other end connected to the first transparent electrode; a pixel defining layer disposed over the source and drain electrode to cover the source and drain electrode and having an opening disposed over the first transparent electrode; a light-blocking layer formed over the pixel defining layer; and an organic light-emitting layer formed over the first transparent electrode.
1. A method of manufacturing an organic light-emitting display, the method comprising:
providing a structure comprising a substrate having a pixel region and a transistor region, the structure further comprising a first electrode in the pixel region and a transistor in the transistor region;
forming a pixel defining layer over the transistor region while exposing at least a portion of the first electrode;
forming a light-blocking layer over at least part of the pixel defining layer; and
forming an organic light-emitting layer over the exposed portion of the first electrode.
2. The method of claim 1 , wherein the transistor comprises: a gate electrode, a gate insulator, a channel, a source and a drain, wherein the gate electrode is interposed between the gate insulator and the substrate, wherein the source is electrically connected to the first electrode.
3. A method of manufacturing an organic light-emitting display, the method comprising:
providing a structure comprising a substrate having a pixel region and a transistor region, the structure further comprising a first electrode in the pixel region and a transistor in the transistor region;
forming a pixel defining layer over the transistor region while exposing at least a portion of the first electrode;
forming a light-blocking layer over at least part of the pixel defining layer; and
forming an organic light-emitting layer over the exposed portion of the first electrode,
wherein the transistor comprises: a gate electrode, a gate insulator, a channel, a source and a drain, wherein the gate electrode is interposed between the gate insulator and the substrate, wherein the source is electrically connected to the first electrode, and
wherein providing the structure comprises:
foaming a second electrode over the transistor region at the same level as the first electrode;
forming the gate electrode over the second electrode;
forming a semiconductor layer comprising an oxide over the gate electrode; and
forming the channel, source and drain in the semiconductor layer.
4. The method of claim 1 , wherein forming the pixel defining layer comprises:
forming a layer of a material for the pixel defining layer over the first electrode and further over the transistor; and
creating an opening in the layer of the material for the pixel defining layer to expose the portion of the first electrode.
5. The method of claim 1 , wherein forming the pixel defining layer comprises exposing an open portion of the pixel defining layer to light and developing the open portion.
6. The method of claim 1 , wherein forming the light-blocking layer comprises forming an opening of the light-blocking layer disposed over the first transparent electrode such that a boundary of the opening of the light-blocking layer is situated further away from a center of an opening of the pixel defining layer compared to a boundary of an opening of the pixel defining layer.
7. The method of claim 1 , wherein the pixel defining layer is made of one or more materials selected from the group consisting of a photosensitive polyimide material, an acrylic material, a siloxane material, and a novolac material.
8. The method of claim 1 , wherein the light-blocking layer comprises a material with a dielectric constant of about 3.0 or less.
9. The method of claim 1 , wherein the light-blocking layer comprises a black material.
10. The method of claim 1 , wherein the light-blocking layer is configured to block light in a wavelength range of about 350 nm to about 450 nm.
11. The method of claim 1 , wherein in the forming of the light-blocking layer, a light-blocking material is inkjet-printed over a predetermined region of the substrate.
12. The method of claim 1 , wherein the transistor comprises an oxide semiconductor material.
13. A method of manufacturing an organic light-emitting display, the method comprising:
providing a structure comprising a substrate having a pixel region and a transistor region, the structure further comprising a first electrode in the pixel region and a transistor in the transistor region;
forming a first pixel defining layer over the transistor region while exposing at least a portion of the first electrode;
forming a light-blocking layer over at least part of the first pixel defining layer;
forming a second pixel defining layer over at least part of the light-blocking layer while exposing the at least a portion of the first electrode; and
forming an organic light-emitting layer over at least part of the exposed portion of the first electrode.
14. The method of claim 13 , wherein the transistor comprises: a gate electrode, a gate insulator, a channel, a source and a drain, wherein the gate electrode is interposed between the gate insulator and the substrate, wherein the source is electrically connected to the first electrode.
15. The method of claim 14 , wherein providing the structure comprises:
forming a second electrode over the transistor region at the same level as the first electrode;
forming the gate electrode over the second electrode;
forming a semiconductor layer comprising an oxide over the gate electrode; and
forming the channel, source and drain in the semiconductor layer.
16. The method of claim 13 , wherein forming the first pixel defining layer comprises:
forming a layer of a material for the first pixel defining layer over the first electrode and further over the transistor; and
creating an opening in the layer of the material for the first pixel defining layer to expose the at least a portion of the first electrode.
17. The method of claim 13 , wherein the forming the first pixel defining layer of exposing an open portion of the first pixel defining layer to light and developing the open portion.
18. The method of claim 13 , wherein in the forming the light-blocking layer comprises inkjet-printing a light-blocking material over a predetermined region of the substrate.
19. The method of claim 13 , wherein the first and second pixel defining layers comprise one or more materials selected from the group consisting of a photosensitive polyimide material, an acrylic material, a siloxane material, and a novolac material.
20. The method of claim 19 , wherein the first and second pixel defining layers comprise the same material.
21. The method of claim 13 , wherein the transistor comprises an oxide semiconductor material.