Integrated circuit and manufacturing method thereof
An integrated circuit and a manufacturing method thereof are provided. A chip size can be reduced by forming a memory device in which a ferroelectric capacitor region is laminated on a DRAM. The integrated circuit includes a cell array region having a capacitor, a peripheral circuit region, and a ferroelectric capacitor region being formed on an upper layer of the cell array region and the peripheral circuit region, and having a ferroelectric capacitor device.
1. An integrated circuit, comprising:
a cell array region having a cell capacitor;
a peripheral circuit region formed adjacent to the cell array region and not having the cell capacitor;
a metal line laminated over the cell array region and the peripheral circuit region, wherein the metal line is electrically coupled to a ferroelectric capacitor region and the peripheral circuit region; and
the ferroelectric capacitor region having a laminated structure of a plurality of ferroelectric capacitor devices and provided over the cell array region and the peripheral circuit region,
wherein the plurality of ferroelectric capacitor devices are formed in a different layer from the cell capacitor,
wherein the plurality of ferroelectric capacitor devices are electrically coupled to the peripheral circuit region through the metal line.
2. The integrated circuit according to claim 1 , wherein the plurality of ferroelectric capacitor devices are used as a pump capacitor used in a pump circuit of the peripheral circuit region.
3. The integrated circuit according to claim 2 , wherein the plurality of ferroelectric capacitor devices are used as a decoupling capacitor used in an output terminal of the pump circuit of the peripheral circuit region.
4. The integrated circuit according to claim 1 , wherein the plurality of ferroelectric capacitor devices are used as a decoupling capacitor used in a power terminal of the peripheral circuit region.
5. The integrated circuit according to claim 1 , wherein the integrated circuit comprises a dynamic random access memory (DRAM).
6. The integrated circuit according to claim 1 , wherein the peripheral circuit region is a Complementary Metal-Oxide Semiconductor (CMOS) circuit region comprising active and passive devices.
7. The integrated circuit according to claim 1 , wherein the ferroelectric capacitor region is formed using a lamination process over the cell array region and the peripheral circuit region.
8. An integrated circuit, comprising:
a DRAM including a bank region having a cell capacitor;
a peripheral circuit region formed adjacent to the DRAM and not having the cell capacitor;
a metal line laminated over the DRAM and the peripheral circuit region, wherein the metal line is electrically coupled to a ferroelectric capacitor region and the peripheral circuit region; and
the ferroelectric capacitor region having a laminated structure of a plurality of ferroelectric capacitor devices and provided over the DRAM,
wherein a part of the peripheral circuit region uses the plurality of ferroelectric capacitor devices,
wherein the plurality of ferroelectric capacitor devices are formed in a different layer from the cell capacitor,
wherein the plurality of ferroelectric capacitor devices are electrically coupled to the peripheral circuit region through the metal line.
9. The integrated circuit according to claim 8 , wherein the part of the peripheral circuit region includes a pump circuit region and a power terminal.
10. The integrated circuit according to claim 8 , wherein the peripheral circuit region is a Complementary Metal-Oxide Semiconductor (CMOS) circuit region comprising active and passive devices.
11. The integrated circuit according to claim 8 , wherein the ferroelectric capacitor region is formed using a lamination process over the DRAM.
12. An integrated circuit, comprising:
a cell array region having a ferroelectric capacitor;
a peripheral circuit region not having a cell capacitor;
a metal line laminated over the cell array region and the peripheral circuit region, wherein the metal line is electrically coupled to a ferroelectric capacitance region and the peripheral circuit region; and
the ferroelectric capacitance region having a laminated structure of a plurality of ferroelectric capacitor devices and provided over the peripheral circuit region,
wherein the plurality of ferroelectric capacitor devices are electrically coupled to the peripheral circuit region through the metal line, and the ferroelectric capacitance region is at a height above the cell array region.
13. The integrated circuit according to claim 12 , wherein the ferroelectric capacitance region is shared by peripheral circuits of the peripheral circuit region.
14. The integrated circuit according to claim 12 , wherein the integrated circuit comprises a radio frequency identification (RFID) tag.
15. The integrated circuit according to claim 12 , wherein the integrated circuit comprises a system-on-chip (SOC).
16. The integrated circuit according to claim 12 , wherein the integrated circuit comprises a ferroelectric random access memory (FeRAM).
17. The integrated circuit according to claim 12 , wherein the peripheral circuit region is a Complementary Metal-Oxide Semiconductor (CMOS) circuit region comprising active and manual devices.
18. The integrated circuit according to claim 17 , wherein the ferroelectric capacitance region is formed using a lamination process over the Complementary Metal-Oxide Semiconductor (CMOS) circuit region.