Semiconductor device
There is provided a semiconductor device including a first conductive layer, an insulating layer, a second conductive layer, a channel layer, a passivation layer and a third conductive layer. The insulating layer covers the first conductive layer. The second conductive layer is formed on the insulating layer and has an inner opening. The channel layer is formed on the inner opening of the second conductive layer to fully cover the inner opening. The passivation layer is formed upon the channel layer to cover the channel layer and has a contact hole inside the inner opening of the second conductive layer. The third conductive layer is formed in the contact hole.
1. A semiconductor device, comprising:
a first conductive layer;
an insulating layer covering the first conductive layer;
a second conductive layer formed on the insulating layer and having an inner opening;
a channel layer formed on the inner opening of the second conductive layer to fully cover the inner opening;
a passivation layer formed upon the channel layer to cover the channel layer and having a contact hole inside the inner opening of the second conductive layer; and
a third conductive layer formed in and extending out from the contact hole.
2. The semiconductor device as claimed in claim 1 , wherein distances from edges of the contact hole to the second conductive layer are all identical, or the contact hole locates at a center position of the inner opening of the second conductive layer.
3. The semiconductor device as claimed in claim 1 , wherein the contact hole and an inner edge of the second conductive layer are formed as a rectangle, a square or a symmetric polygon.
4. The semiconductor device as claimed in claim 1 , wherein the third conductive layer is a transparent electrode layer.
5. The semiconductor device as claimed in claim 1 , further comprising an overcoat layer between the passivation layer and the third conductive layer.
6. The semiconductor device as claimed in claim 1 , wherein the channel layer is a metal oxide, an amorphous silicon, a polysilicon or a single crystal silicon semiconductor channel layer.
7. The semiconductor device as claimed in claim 1 , further comprising a contact layer formed between the second conductive layer and at least one of the insulating layer and the channel layer.
8. A semiconductor device, comprising:
a first conductive layer;
an insulating layer covering the first conductive layer;
a second conductive layer formed on the insulating layer and having an inner opening;
a channel layer formed on the inner opening of the second conductive layer to fully cover the inner opening;
a passivation layer formed upon the channel layer to cover the channel layer and having a contact hole inside the inner opening of the second conductive layer; and
a third conductive layer formed in the contact hole; and
a transparent electrode layer electrically coupled to and extending out from the third conductive layer.
9. The semiconductor device as claimed in claim 8 , wherein distances from edges of the third conductive layer to the second conductive layer are all identical, or the third conductive layer locates at a center position of the inner opening of the second conductive layer.
10. The semiconductor device as claimed in claim 8 , wherein the third conductive layer and an inner edge of the second conductive layer are formed as a rectangle, a square or a symmetric polygon.
11. The semiconductor device as claimed in claim 8 , further comprising an overcoat layer between the passivation layer and the transparent electrode layer.
12. The semiconductor device as claimed in claim 8 , wherein the channel layer is a metal oxide, an amorphous silicon, a polysilicon or a single crystal silicon semiconductor channel layer.
13. The semiconductor device as claimed in claim 8 , further comprising a contact layer formed between the second conductive layer and at least one of the insulating layer and the channel layer.
14. A semiconductor device, comprising:
a first conductive layer;
an insulating layer covering the first conductive layer;
a second conductive layer formed on the insulating layer and comprising a first part, a second part and a third part, wherein the second part and the third part extend perpendicularly from the first part;
a channel layer formed inside the first part, the second part and the third part and covering a part of the first part, the second part and the third part;
a passivation layer formed upon the channel layer to cover the channel layer and having a contact hole between the second part and the third part; and
a third conductive layer formed in the contact hole.
15. The semiconductor device as claimed in claim 14 , wherein the third conductive layer is a transparent electrode layer and extends out from the contact hole, or the semiconductor device further comprises a transparent electrode layer electrically coupled to and extending out from the third conductive layer.
16. The semiconductor device as claimed in claim 15 , further comprising an overcoat layer between the passivation layer and the transparent electrode layer.
17. The semiconductor device as claimed in claim 14 , wherein distances from edges of the contact hole to the first part, the second part and the third part of the second conductive layer are all identical.
18. The semiconductor device as claimed in claim 14 , wherein the contact hole is formed as a rectangle or a square.
19. The semiconductor device as claimed in claim 14 , wherein the channel layer is a metal oxide, an amorphous silicon, a polysilicon or a single crystal silicon semiconductor channel layer.
20. The semiconductor device as claimed in claim 14 , further comprising a contact layer formed between the second conductive layer and at least one of the insulating layer and the channel layer.