Display panel and method for manufacturing the same

1. A display panel, comprising:

a transparent substrate having a display region and a peripheral region, wherein the display region has a plurality of sub-pixel regions, and at least one of the sub-pixel regions at least has a capacitance region and a transistor region;

a first thin film transistor and a second thin film transistor disposed on the transistor region of transparent substrate, wherein the first thin film transistor comprises a first gate electrode, a first source/drain electrode, a second source/drain electrode and a first active layer, and the second thin film transistor comprises a second gate electrode, a third source/drain electrode, a fourth source/drain electrode and a second active layer;

a transparent bottom electrode disposed on the capacitance region of the transparent substrate, and the transparent bottom electrode being connected to the first source/drain electrode;

a capacitance layer covering the transparent bottom electrode;

a transparent top electrode disposed on the capacitance layer, wherein the transparent top electrode is connected to the third source/drain electrode;

an opposite substrate disposed on the transparent substrate; and

a display medium layer disposed between the transparent substrate and the opposite substrate, and the display medium layer being disposed on the transparent top electrode.

2. The display panel of claim 1 , further comprising a color filter interposed between the capacitance region of the transparent substrate and the transparent bottom electrode.

3. The display panel of claim 1 , wherein the capacitance layer further covers the first thin film transistor and the second thin film transistor.

4. The display panel of claim 1 , wherein the display medium layer comprises a self-luminous material.

5. The display panel of claim 4 , further comprising a reflective electrode covering the display medium layer.

6. The display panel of claim 4 , further comprising an overcoat layer disposed on the first thin film transistor and the second thin film transistor, wherein the overcoat layer has at least one opening to define an effective light-emitting region substantially overlapping the capacitance region.

7. The display panel of claim 4 , wherein the transparent bottom electrode further connects to the second gate electrode of the second thin film transistor.

8. The display panel of claim 7 , further comprising a scan line, a data line and a power line, wherein the scan line is connected to the first gate electrode of the first thin film transistor, and the data line is connected to the second source/drain electrode of the first thin film transistor, and the power line is connected to the fourth source/drain electrode of the second thin film transistor.

9. A method for manufacturing a display panel, comprising:

providing a transparent substrate having a display region and a peripheral region, wherein the display region has a plurality of sub-pixel regions, and at least one of the sub-pixel regions at least has a capacitance region and a transistor region;

forming a first thin film transistor and a second thin film transistor on the transistor region of transparent substrate, wherein the first thin film transistor comprises a first gate electrode, a first source/drain electrode, a second source/drain electrode and a first active layer, and the second thin film transistor comprises a second gate electrode, a third source/drain electrode, a fourth source/drain electrode and a second active layer;

forming a transparent bottom electrode on the capacitance region of the transparent substrate, wherein the transparent bottom electrode is connected to the first source/drain electrode;

forming a capacitance layer covering the transparent bottom electrode;

forming a transparent top electrode on the capacitance layer, wherein the transparent top electrode is connected to the third source/drain electrode;

providing an opposite substrate on the transparent substrate; and

disposing a display medium layer between the transparent substrate and the opposite substrate, wherein the display medium layer is disposed on the transparent top electrode.

10. The method of claim 9 , further comprising forming a color filter on the capacitance region of the transparent substrate before the step of forming the transparent bottom electrode, wherein the color filter is interposed between the capacitance region of the transparent substrate and the transparent bottom electrode.

11. The method of claim 9 , wherein the capacitance layer further covers the first thin film transistor and the second thin film transistor in the step of forming the capacitance layer.

12. The method of claim 9 , further comprising:

forming an overcoat layer covering the transparent top electrode, the first thin film transistor and the second thin film transistor, wherein the overcoat layer has at least one opening to expose the transparent top electrode and to define an effective light-emitting region substantially overlapping the capacitance region, and the display medium layer is disposed in the opening and comprise a self-luminous material; and

forming a reflective electrode covering the display medium layer.

13. The method of claim 12 , wherein the transparent bottom electrode further connects to the second gate electrode of the second thin film transistor.

14. The method of claim 13 , further comprising forming a scan line, a data line and a power line on the transparent substrate, wherein the scan line is connected to the first gate electrode of the first thin film transistor, and the data line is connected to the second source/drain electrode of the first thin film transistor, and the power line is connected to the fourth source/drain electrode of the second thin film transistor.