Display device and method of manufacturing the same
A display device according to an exemplary embodiment of the present invention includes a semiconductor layer; a data line disposed on the semiconductor layer, and a source electrode as well as a drain electrode disposed on the semiconductor layer and facing the source electrode. The semiconductor layer is made of an oxide semiconductor including indium, tin, and zinc. An atomic percent of indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and the data line and the drain electrode comprise copper.
1. A display device comprising:
a first substrate;
a gate line disposed on the first substrate and including a gate electrode;
a gate insulating layer disposed on the gate line;
a semiconductor layer disposed on the gate insulating layer;
a data line disposed on the semiconductor layer and including a source electrode;
a drain electrode disposed on the semiconductor layer and facing the source electrode; and
a passivation layer disposed on the data line and the drain electrode,
wherein the semiconductor layer comprises an oxide semiconductor including indium, tin, and zinc,
wherein an atomic percent of the indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of the zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of the tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %,
wherein a minimum etch selective ratio between the oxide semiconductor, and the data line and the drain electrode satisfies:
−0.22+0.002×T,
where T denotes a thickness of the data line and the drain electrode, and
wherein the data line and the drain electrode comprise copper.
2. The display device of claim 1 , wherein the gate insulating layer includes a first insulating layer and a second insulating layer disposed on the first insulating layer,
the first insulating layer includes silicon nitride, and
the second insulating layer includes silicon oxide.
3. The display device of claim 2 , wherein the passivation layer includes a first passivation layer and a second passivation layer disposed on the first passivation layer,
the first passivation layer includes silicon oxide, and
the second passivation layer includes silicon nitride.
4. The display device of claim 3 , further comprising a pixel electrode disposed on the passivation layer,
wherein the passivation layer has a contact hole, and the pixel electrode and the drain electrode are connected through the contact hole.
5. The display device of claim 4 , further comprising a second substrate facing the first substrate,
wherein a liquid crystal layer is interposed between the first substrate and the second substrate.
6. A display device comprising:
a first substrate;
a gate line disposed on the first substrate and including a gate electrode;
a gate insulating layer disposed on the gate line;
a semiconductor layer disposed on the gate insulating layer;
a data line disposed on the semiconductor layer and including a source electrode;
a drain electrode disposed on the semiconductor layer and facing the source electrode; and
a passivation layer disposed on the data line and the drain electrode,
wherein the semiconductor layer comprises an oxide semiconductor including indium, tin, and zinc,
wherein an atomic percent of the indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 80 at %, an atomic percent of the zinc in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 70 at %, and an atomic percent of the tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and
wherein the data line and the drain electrode include a lower layer and an upper layer comprising molybdenum, and an intermediate layer comprising aluminum, the intermediate layer being disposed between the lower layer and the upper layer.
7. The display device of claim 6 , wherein the gate insulating layer includes a first insulating layer and a second insulating layer disposed on the first insulating layer,
the first insulating layer includes silicon nitride, and
the second insulating layer includes silicon oxide.
8. The display device of claim 7 , wherein the passivation layer includes a first passivation layer and a second passivation layer disposed on the first passivation layer,
the first passivation layer includes silicon oxide, and
the second passivation layer includes silicon nitride.
9. The display device of claim 8 , further comprising a pixel electrode disposed on the passivation layer,
wherein the passivation layer has a contact hole, and the pixel electrode and the drain electrode are connected through the contact hole.
10. The display device of claim 9 , further comprising a second substrate facing the first substrate,
wherein a liquid crystal layer is interposed between the first substrate and the second substrate.
11. A method of manufacturing a display device, the method comprising:
forming a gate line on a first substrate, the gate line including a gate electrode;
forming a gate insulating layer on the gate line;
forming a semiconductor layer by depositing an oxide semiconductor material including indium, tin, and zinc on the gate insulating layer, and then etching the oxide semiconductor material with a first etchant;
forming a data line including a source electrode and a drain electrode facing the source electrode, by forming a metal layer on the semiconductor layer and then etching the metal layer with a second etchant, the metal layer including copper; and
forming a passivation layer on the data line and the drain electrode;
wherein an atomic percent of the indium in the oxide semiconductor material is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of the zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of the tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %; and
wherein a minimum etch selective ratio between the oxide semiconductor material and the metal layer satisfies:
−0.22+0.002×T,
where T denotes a thickness of the metal layer.
12. The method of claim 11 , wherein the first etchant and the second etchant are copper etchants.
13. The method of claim 11 , wherein the first etchant is a copper etchant, and the second etchant is a combination etchant.
14. The method of claim 13 , wherein the metal layer includes a lower layer, an upper layer that comprises molybdenum, and an intermediate layer comprising aluminum, the intermediate layer being disposed between the lower layer and the upper layer.
15. The method of claim 11 , wherein the gate insulating layer includes a first insulating layer and a second insulating layer disposed on the first insulating layer,
the first insulating layer includes silicon nitride, and
the second insulating layer includes silicon oxide.
16. The method of claim 15 , wherein the passivation layer includes a first passivation layer and a second passivation layer disposed on the first passivation layer,
the first passivation layer includes silicon oxide, and
the second passivation layer includes silicon nitride.
17. The method of claim 16 , further comprising forming a pixel electrode on the passivation layer,
wherein the passivation layer has a contact hole, and the pixel electrode and the drain electrode are connected through the contact hole.