Semiconductor device, RFID tag using the same and display device
Disclosed is an oxide semiconductor layer ( 13 ) which forms a channel for a thin-film transistor and which includes at least In and oxygen and one or more types of elements from among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge. A high concentration region ( 13 d ) is disposed on one section of the oxide semiconductor layer ( 13 ), whereby said region has a maximum In concentration 30 at %; or higher than other regions on the oxide semiconductor layer ( 13 ). The film thickness of the oxide semiconductor layer ( 13 ) is 100 nm max., and the film thickness of the high concentration region ( 13 d ) is 20 nm max. or, preferably, 6 nm max. This enables a thin-film transistor with a sub-threshold slope of 100 mV/decade max., a high on-current, and a high field effect mobility to be achieved.
1. A semiconductor device having a thin-film transistor comprising a gate insulating film, a gate electrode, a channel layer, a source electrode, and a drain electrode which are formed over a main surface of a substrate, wherein
the channel layer of the thin-film transistor is made of oxide semiconductor containing at least In and oxygen and further containing one or more types of elements among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge;
a portion of the channel layer has a high concentration region with a maximum In concentration 30 at % or higher than other regions of the channel layer; and
film thickness of the high concentration region is 20 nm or less.
2. The semiconductor device according to claim 1 , wherein film thickness of the channel layer is 100 nm or less.
3. The semiconductor device according to claim 2 , wherein the film thickness of the high concentration region is 6 nm or less.
4. A semiconductor device having a first thin-film transistor and a second thin-film transistor each comprising a gate insulating film, a gate electrode, a channel layer, a source electrode, and a drain electrode which are formed over a main surface of a substrate, wherein
the channel layer of each of the first and second thin-film transistors is made of oxide semiconductor containing at least In and oxygen and further containing one or more types of elements among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge;
the channel layer of the first thin-film transistor has, in a region nearest to the gate electrode, a high concentration region with a maximum In concentration 30 at % or more higher than other regions of the channel layer;
the channel layer of the second thin-film transistor has, in a region remotest from the gate electrode, a high concentration region with a maximum In concentration 30 at % or higher than the other regions of the channel layer; and
film thickness of the high concentration region of each of the first and second thin-film transistors is 20 nm or less.
5. The semiconductor device according to claim 4 , wherein film thickness of the channel layer of each of the first and second thin-film transistors is 100 nm or less.
6. The semiconductor device according to claim 5 , wherein the film thickness of the high concentration region of each of the first and second thin-film transistors is 6 nm or less.
7. The semiconductor device according to claim 1 , wherein distribution of elements in the channel layer is analyzed by a secondary ion mass spectrometer (SIMS).
8. The semiconductor device according to claim 1 , wherein distribution of elements in the channel layer is analyzed by an energy dispersive X-ray spectroscopy (EDX) method.
9. The semiconductor device according to claim 1 , wherein the high concentration region is formed by a multi-target sputtering method or co-evaporation method.
10. The semiconductor device according to claim 1 , wherein the high concentration region is formed by a thermal diffusion method.
11. An RFID tag having an antenna section and an IC chip,
the IC chip having a thin-film transistor comprising a gate insulating film, a gate electrode, a channel layer, a source electrode, and a drain electrode which are formed over a main surface of a substrate, wherein
the channel layer of the thin-film transistor is made of oxide semiconductor containing at least In and oxygen and further containing one or more types of elements among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge;
a portion of the channel layer has a high concentration region with a maximum In concentration 30 at % or higher than other regions of the channel layer; and
film thickness of the high concentration region is 20 nm or less.
12. A display device having a thin-film transistor comprising a gate insulating film, a gate electrode, a channel layer, a source electrode, and a drain electrode which are formed over a main surface of a substrate, wherein
the channel layer of the thin-film transistor is made of oxide semiconductor containing at least In and oxygen and further containing one or more types of elements among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge;
a portion of the channel layer has a high concentration region with a maximum In concentration 30 at % or higher than other regions of the channel layer; and
film thickness of the high concentration region is 20 nm or less.