Semiconductor device having buried bit lines and method for fabricating the same
A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium.
1. A semiconductor device comprising:
body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls;
buried bit lines, buried in the recessed sidewalls; and a barrier layer, interposed between each of the buried bit lines and each of the body lines corresponding thereto.
2. The semiconductor device according to claim 1 , wherein each of the buried bit lines comprises a metal silicide and the barrier layer comprises germanium.
3. The semiconductor device according to claim 2 , wherein the barrier layer includes silicon germanium.
4. The semiconductor device according to claim 2 , wherein a content of germanium in the barrier layer is at least approximately 30%.
5. The semiconductor device according to claim 2 , wherein the metal silicide comprises a cobalt silicide.
6. A semiconductor device comprising:
a plurality of active regions separated from one another;
a plurality of first trenches defined in a substrate, wherein the plurality of active regions are separated from one another by the plurality of first trenches;
supporters filled in the plurality of first trenches;
second trenches, each separating each of the plurality of active regions, and each having recessed sidewalls that face each other;
a pair of separated buried bit lines, formed in each of the second trenches, and including a metal silicide; and
a barrier layer, interposed between the pair of separated buried bit lines and each of the second trenches, and containing germanium.
7. The semiconductor device according to claim 6 , wherein each of the plurality of active regions comprises:
a body formed over the substrate;
a pair of body lines, separated by each of the second trenches over the body, and having the recessed sidewalls; and
a plurality of pillars formed over each of the pair of body lines.
8. The semiconductor device according to claim 6 ,
wherein the plurality of pillars includes channel regions for vertical channel transistors, and
wherein the semiconductor device further comprises:
storages connected to the plurality of pillars.
9. The semiconductor device according to claim 6 , wherein the supporters comprise a dielectric material.
10. The semiconductor device according to claim 6 , wherein the barrier layer comprises silicon germanium.
11. The semiconductor device according to claim 6 , wherein a content of germanium in the barrier layer is at least approximately 30%.
12. The semiconductor device according to claim 6 , wherein the metal silicide comprises a cobalt silicide.