Structure and method for MOSFETS with high-K and metal gate structure
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; and a gate stack disposed on the semiconductor substrate. The gate stack includes a high k dielectric material layer, a capping layer disposed on the high k dielectric material layer, and a metal layer disposed on the capping layer. The capping layer and the high k dielectric material layer have a footing structure.
1. A semiconductor structure, comprising:
a semiconductor substrate; and
a gate stack disposed on the semiconductor substrate, wherein the gate stack includes:
a high k dielectric material layer,
a capping layer disposed on the high k dielectric material layer, and
a metal layer disposed on the capping layer, wherein a top surface of the metal layer includes a first width dimension, and wherein an opposing bottom surface of the metal layer includes a second width dimension less than the first width dimension,
wherein the capping layer and the high k dielectric material layer have a footing structure, wherein the capping layer of the footing structure includes a third width dimension greater than the second width dimension, and wherein the high k dielectric material layer of the footing structure includes a fourth width dimension greater than the third width dimension.
2. The semiconductor structure of claim 1 , wherein the footing structure has a horizontal dimension ranging between about 0.5 nm and about 2.5 nm along a gate length direction of the gate stack.
3. The semiconductor structure of claim 1 , wherein the metal layer includes:
a work function metal film disposed on the capping layer; and
another metal film on the work function metal film.
4. The semiconductor structure of claim 1 , wherein the capping layer includes titanium nitride.
5. The semiconductor structure of claim 1 , further comprising an interfacial layer disposed between the semiconductor substrate and the high k dielectric material layer.
6. The semiconductor structure of claim 1 , wherein the metal layer includes a reentrant sidewall profile.
7. The semiconductor structure of claim 6 , wherein the sidewall of the metal layer has an angle to a top surface of the semiconductor substrate, and the angle ranges between about 85 degrees and about 90 degrees.
8. A semiconductor structure, comprising:
a semiconductor substrate; and
a gate stack disposed on the semiconductor substrate, wherein the gate stack includes:
a gate dielectric layer including a high k dielectric material layer, wherein a top surface of the gate dielectric layer includes a first width dimension,
a capping layer disposed on the high k dielectric material layer, wherein a top surface of the capping layer includes a second width dimension less than the first width dimension,
a metal layer disposed on the capping layer, wherein the metal layer has a reentrant sidewall profile, and wherein a bottom surface of the metal layer includes a third width dimension less than the second width dimension,
an interfacial layer interposed between the gate dielectric layer and the semiconductor substrate, and
gate spacers formed on sidewalls of the metal layer and on the top surface of the capping layer and on the top surface of the gate dielectric layer without being formed on a top surface of the interfacial layer.
9. The semiconductor structure of claim 8 , wherein:
the semiconductor substrate has a top surface wherein the gate stack is disposed on; and
the metal layer has a sidewall tilted to the top surface of the semiconductor substrate with an angle being less than about 90 degrees.
10. The semiconductor structure of claim 9 , wherein the angle is greater than about 85 degrees.
11. The semiconductor structure of claim 8 , wherein the gate dielectric layer and the capping layer includes a footing feature.
12. The semiconductor structure of claim 11 , wherein the footing feature has a dimension along a gate length direction, wherein the dimension ranges between about 0.5 nm and about 2.5 nm.
13. The semiconductor structure of claim 8 , wherein
the capping layer includes titanium nitride.
14. The semiconductor structure of claim 8 , wherein the metal layer includes:
a work function metal film disposed on the capping layer; and another metal film disposed on the work function metal film.
15. A semiconductor device comprising:
a semiconductor substrate;
a gate dielectric layer disposed on the semiconductor substrate, wherein a top surface of the gate dielectric layer includes a first dimension,
a capping layer disposed on the gate dielectric layer, wherein a top surface of the capping layer includes a second dimension less than the first dimension, and
a gate metal layer disposed on the capping layer, wherein a bottom surface of the gate metal layer includes a third dimension less than the second dimension, and wherein a top surface of the gate metal layer includes a fourth dimension greater than the third dimension;
an interfacial layer interposed between the gate dielectric layer and the semiconductor substrate; and
gate spacers formed on sidewalls of the gate metal layer and on the top surface of the capping layer and on the top surface of the gate dielectric layer without being formed on a top surface of the interfacial layer.
16. The semiconductor device of claim 15 , wherein the gate metal layer includes a work function metal film disposed on the capping layer and another metal film disposed on the work function metal film,
wherein the work function metal film is in physical contact with the top surface of the capping layer and the gate spacers.