Moisture-tight semiconductor module and method for producing a moisture-tight semiconductor module

1. A semiconductor module, comprising:

a housing having two outer wall sections arranged at opposite outer sides of the housing, a cover extending from one of the outer wall sections to the other one of the outer wall sections, and a first shaft wall arranged between and spaced apart from the outer wall sections, the first shaft wall delimiting a first shaft;

a circuit carrier having a top side;

a semiconductor chip arranged in the housing and on the top side of the circuit carrier;

an electrically conductive first connection element which runs through the first shaft and extends out of the housing;

a first potting compound arranged between the circuit carrier and the cover and partly between the first connection element and the first shaft wall and which seals the first shaft in interaction with the first connection element;

a second potting compound arranged between the first potting compound and the cover and partly between the first connection element and the first shaft wall and which seals the first shaft in interaction with the first connection element; and

at least one gas-filled volume region directly adjoining the first potting compound,

wherein the first shaft wall has at a side facing the circuit carrier a lower end dipping into the first potting compound.

2. The semiconductor module of claim 1 , wherein the lower end of the first shaft wall dips into the first potting compound to a depth of at least 0.5 mm.

3. The semiconductor module of claim 1 , wherein the second potting compound has a diffusion coefficient for water vapor which is less than 5*10 −9 m 2 /s at a temperature of 40° C.

4. The semiconductor module of claim 1 , wherein a total projection area which arises upon an orthogonal projection of each gas-filled volume region situated in the housing onto the top side of the circuit carrier corresponds to at least 70% of the area of the top side.

5. The semiconductor module of claim 1 , wherein the first potting compound has a penetration according to DIN ISO 2137 which is greater than a penetration according to DIN ISO 2137 of the second potting compound, and wherein the second potting compound has a penetration according to DIN ISO 2137 which is greater than a penetration according to DIN ISO 2137 of the housing.

6. The semiconductor module of claim 1 , wherein the first potting compound has a penetration according to DIN ISO 2137 of at least 20 and/or the second potting compound has a penetration according to DIN ISO 2137 of at most 20.

7. The semiconductor module of claim 1 , wherein the first potting compound has a penetration according to DIN ISO 2137 in the range of 30 to 90.

8. The semiconductor module of claim 1 , wherein the second potting compound has a penetration according to DIN ISO 2137 of 10 to 20.

9. The semiconductor module of claim 1 , wherein the first potting compound has a penetration according to DIN ISO 2137 which is greater than a penetration of the second potting compound according to DIN ISO 2137.

10. The semiconductor module of claim 1 , wherein the first potting compound, proceeding from the circuit carrier, extends at least as far as above the semiconductor chip, and wherein the semiconductor chip is spaced apart from the second potting compound.

11. The semiconductor module of claim 1 , wherein the cover has an underside facing the circuit carrier, and wherein the second potting compound is spaced apart from the underside.

12. The semiconductor module of claim 1 , wherein the cover has an underside facing the circuit carrier, and the second potting compound makes contact with the underside.

13. The semiconductor module of claim 1 , wherein the housing comprises a uniform, homogeneous material.

14. The semiconductor module of claim 1 , wherein the housing comprises a material that differs from a material of the first potting compound and/or from a material of the second potting compound.

15. The semiconductor module of claim 1 , wherein one or more of the at least one volume regions extends over at least 1 mm or over at least 5 mm in a vertical direction perpendicular to the top side of the circuit carrier.

16. The semiconductor module of claim 1 , wherein the second potting compound has a total mass and the ratio between the total mass and the area of the top side of the circuit carrier is less than or equal to 1 gram per square centimeter.

17. The semiconductor module of claim 1 , wherein the housing has a second shaft wall arranged between the two outer wall sections, the second shaft wall delimiting a second shaft and having at a side facing the circuit carrier a lower end dipping into the first potting compound, wherein an electrically conductive second connection element runs through the second shaft and extends out of the housing, and wherein the housing has a connecting channel connecting the first shaft and the second shaft to one another.

18. The semiconductor module of claim 17 , wherein the connecting channel is wholly or partly filled by the second potting compound.

19. The semiconductor module of claim 1 , wherein the second potting compound extends in the first shaft over a height of at least 1 mm.

20. A method for producing a semiconductor module, the method comprising:

providing a housing having two outer wall sections, a cover and a first shaft wall;

providing a circuit carrier having a top side;

providing a semiconductor chip;

providing an electrically conductive first connection element;

arranging the semiconductor chip, the circuit carrier, the housing and the first connection element relative to one another so that:

the cover extends from one of the outer wall sections to the other one of the outer wall sections;

the first shaft wall is arranged between and spaced apart from the outer wall sections and delimits a first shaft;

the semiconductor chip is arranged in the housing on the top side of the circuit carrier; and

the first connection element runs through the first shaft and extends out of the housing;

filling a first potting compound into the interior of the housing and subsequently crosslinking the first potting compound so that the cross-linked first potting compound is arranged between the circuit carrier and the cover and partly between the first connection element and the first shaft wall and seals the first shaft in interaction with the first connection element, wherein the first shaft wall has at a side facing the circuit carrier a lower end dipping into the first potting compound; and

filling a second potting compound into the interior of the housing after the first potting compound is cross-linked so that the second potting compound is arranged between the first potting compound and the cover and partly between the first connection element and the first shaft wall and seals the first shaft in interaction with the first connection element, and that at least one gas-filled volume region directly adjoining the first potting compound remains in the housing.