IP Library Granted Patent US 8,922,729
Granted Patent B2
US 8,922,729 · App. 13/539,901 · Granted Dec 30, 2014

Semiconductor device and method for manufacturing the same

Inventor: Kunio Hosoya (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G02F1/1368G02F1/1362G02F1/136227G02F2201/50
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Quick Facts
Patent No.
US 8,922,729
App. No.
13/539,901
Granted
Dec 30, 2014
Kind
B2
Abstract

It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed.

Claims (19)

1. A method for manufacturing a display device, comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film over the gate electrode;

forming a first island-shaped semiconductor film and a second island-shaped semiconductor film over the gate insulating film;

forming a first source wiring and a first drain electrode in electrical contact with the first island-shaped semiconductor film, and a second source wiring and a second drain electrode in electrical contact with the second island-shaped semiconductor film; and

forming a first insulating film over and in contact with the first source wiring and a second insulating film over and in contact with the second source wiring, wherein the first insulating film is spaced from the second insulating film, and wherein the second insulating film overlaps a portion of the first drain electrode.

2. The method for manufacturing a display device according to claim 1 , wherein the first insulating film and the second insulating film are formed from an inorganic insulating material.

3. The method for manufacturing a display device according to claim 1 , wherein each of the first drain electrode and the second drain electrode includes a lower-layer drain electrode and an upper-layer drain electrode.

4. A method for manufacturing a display device, comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film over the gate electrode;

forming a first island-shaped semiconductor film and a second island-shaped semiconductor film over the gate insulating film;

forming a first source wiring and a first drain electrode in electrical contact with the first island-shaped semiconductor film, and a second source wiring and a second drain electrode in electrical contact with the second island-shaped semiconductor film;

forming a first insulating film over and in contact with the first source wiring and a second insulating film over and in contact with the second source wiring, wherein the first insulating film is spaced from the second insulating film, and wherein the second insulating film overlaps a portion of the first drain electrode; and

forming a first pixel electrode in electrical contact with the first drain electrode and a second pixel electrode in electrical contact with the second drain electrode.

5. The method for manufacturing a display device according to claim 4 , wherein the first insulating film and the second insulating film are formed from an inorganic insulating material.

6. The method for manufacturing a display device according to claim 4 , wherein each of the first drain electrode and the second drain electrode includes a lower-layer drain electrode and an upper-layer drain electrode.

7. The method for manufacturing a display device according to claim 6 , wherein the first pixel electrode is in direct contact with the lower-layer drain electrode of the first drain electrode, and the second pixel electrode is in direct contact with the lower-layer drain electrode of the second drain electrode.

8. The method for manufacturing a display device according to claim 4 , further comprising a step of discharging a liquid crystal material over the first pixel electrode and the second pixel electrode from a droplet discharging apparatus.

Priority Claims (1)
JP 2005-372586 · Dec 26, 2005 · national
Continuity (2)
Division 11640048 · Dec 14, 2006
Related Publication 20120270348A1 · Oct 25, 2012