Method for manufacturing oxide semiconductor device with improved electronic properties
The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen deficiencies. A stacked base film is formed, a first heat treatment is performed, an oxide semiconductor film is formed over and in contact with the stacked base film, and a second heat treatment is performed. In the stacked base film, a first base film and a second base film are stacked in this order. The first base film is an insulating oxide film from which oxygen is released by heating. The second base film is an insulating metal oxide film. An oxygen diffusion coefficient of the second base film is smaller than that of the first base film.
1. A method for manufacturing a semiconductor device comprising:
forming a first base film over a substrate;
forming a second base film over the first base film;
removing water and hydrogen contained in the first base film and the second base film while desorption of oxygen from the first base film and the second base film is suppressed by performing a first heat treatment on the substrate;
after performing the first heat treatment, forming an oxide semiconductor film over the second base film; and
supplying oxygen from the first base film to the oxide semiconductor film through the second base film by performing a second heat treatment on the substrate;
wherein the first base film is an insulating oxide film from which oxygen is released by the second heat treatment,
wherein an oxygen diffusion coefficient of the second base film is smaller than that of the first base film, and
wherein the second heat treatment is performed at a temperature higher than a temperature of the first heat treatment and lower than or equal to 450° C.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein a thickness of the second base film is greater than or equal to 1 nm and less than or equal to 20 nm.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the first base film is a silicon oxide film.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the second base film is any of an yttrium oxide film, a zirconium oxide film, an aluminum oxide film, and a zirconium oxide film to which yttrium oxide is added.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the first base film comprises more oxygen than a stoichiometric proportion.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the first heat treatment is performed at a temperature higher than or equal to 250° C. and lower than or equal to 350° C.
7. A method for manufacturing a semiconductor device comprising:
forming a first base film containing oxygen over a substrate;
forming a second base film over the first base film;
removing water and hydrogen contained in the first base film and the second base film while desorption of oxygen from the first base film and the second base film is suppressed by performing a first heat treatment on the substrate;
after performing the first heat treatment, forming an oxide semiconductor film over the second base film;
supplying oxygen from the first base film to the oxide semiconductor film through the second base film by performing a second heat treatment on the substrate;
processing the oxide semiconductor film to form an island-shaped oxide semiconductor film;
forming a gate insulating film so as to cover the island-shaped oxide semiconductor film;
forming a gate electrode over the gate insulating film; and
forming a source electrode and a drain electrode connected to the island-shaped oxide semiconductor film,
wherein an oxygen diffusion coefficient of the second base film is smaller than that of the first base film, and
wherein the second heat treatment is performed at a temperature higher than a temperature of the first heat treatment and lower than or equal to 450° C.
8. The method for manufacturing a semiconductor device according to claim 7 , wherein a thickness of the second base film is greater than or equal to 1 nm and less than or equal to 20 nm.
9. The method for manufacturing a semiconductor device according to claim 7 , wherein the first base film is a silicon oxide film.
10. The method for manufacturing a semiconductor device according to claim 7 , wherein the second base film is any of an yttrium oxide film, a zirconium oxide film, an aluminum oxide film, and a zirconium oxide film to which yttrium oxide is added.
11. The method for manufacturing a semiconductor device according to claim 7 , wherein the first base film comprises more oxygen than a stoichiometric proportion.
12. The method for manufacturing a semiconductor device according to claim 7 , wherein the first heat treatment is performed at a temperature higher than or equal to 250° C. and lower than or equal to 350° C.
13. A method for manufacturing a semiconductor device comprising:
forming a first base film containing oxygen over a substrate;
forming a second base film over the first base film;
removing water and hydrogen contained in the first base film and the second base film while desorption of oxygen from the first base film and the second base film is suppressed by performing a first heat treatment on the substrate at a temperature higher than or equal to 250° C. and lower than or equal to 350° C.;
after performing the first heat treatment, forming an oxide semiconductor film over the second base film;
supplying oxygen from the first base film to the oxide semiconductor film through the second base film by performing a second heat treatment on the substrate at a temperature higher than a temperature of the first heat treatment and lower than or equal to 450° C.;
processing the oxide semiconductor film to form an island-shaped oxide semiconductor film;
forming a gate insulating film so as to cover the island-shaped oxide semiconductor film;
forming a gate electrode over the gate insulating film; and
forming a source electrode and a drain electrode connected to the island-shaped oxide semiconductor film,
wherein an oxygen diffusion coefficient of the second base film is smaller than that of the first base film.
14. The method for manufacturing a semiconductor device according to claim 13 , wherein a thickness of the second base film is greater than or equal to 1 nm and less than or equal to 20 nm.
15. The method for manufacturing a semiconductor device according to claim 13 , wherein the first base film is a silicon oxide film.
16. The method for manufacturing a semiconductor device according to claim 13 , wherein the second base film is any of an yttrium oxide film, a zirconium oxide film, an aluminum oxide film, and a zirconium oxide film to which yttrium oxide is added.
17. The method for manufacturing a semiconductor device according to claim 13 , wherein the first base film comprises more oxygen than a stoichiometric proportion.