P-type metal oxide semiconductor
The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In 1−x Ga 1−y M x+y ZnO 4+m , wherein M is Ca, Mg, or Cu, 0<x+y≦0.1, 0≦m≦3, and 0<x, 0≦y, or 0≦x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×10 15 ˜6×10 19 cm −3 .
1. A p-type metal oxide semiconductor material having the following formula:
In 1−x Ga 1−y M x+y ZnO 4+m ,
wherein M is Calcium, Magnesium, or Copper, 0<x+y≦0.1, 0≦m≦3, and 0<x, 0≦y, or 0≦x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×10 15 ˜6×10 19 cm −3 .
2. The p-type metal oxide semiconductor material as claimed in claim 1 , wherein M is Calcium, 0.0005≦x≦0.1, y=0.
3. The p-type metal oxide semiconductor material as claimed in claim 1 , wherein M is Magnesium, 0.001≦x≦0.005, y=0.
4. The p-type metal oxide semiconductor material as claimed in claim 1 , wherein M is Copper, 0.001≦x≦0.1, y=0.
5. The p-type metal oxide semiconductor material as claimed in claim 1 , wherein M is Magnesium, x=0, 0.001≦y≦0.1.
6. The p-type metal oxide semiconductor material as claimed in claim 1 , wherein M is Copper, x=0, 0.025≦y≦0.1.