IP Library › Granted Patent US 8,934,271
Granted Patent B2
US 8,934,271 · App. 13/329,909 · Granted Jan 13, 2015

Startup circuit, switching power source IC, and switching power source apparatus

Inventors: Hideyuki Kubota (Niiza, JP); Satoshi Kondou (Niiza, JP)
Assignee: Sanken Electric Co., Ltd.
H02M1/36Y10S323/901
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Quick Facts
Patent No.
US 8,934,271
App. No.
13/329,909
Granted
Jan 13, 2015
Kind
B2
Abstract

A startup circuit includes a MOSFET that is connected between a startup power source and an auxiliary power source made of a smoothing capacitor and passes a startup current from the startup power source to the smoothing capacitor, a JFET that has a drain terminal connected to a drain terminal of the MOSFET and a source terminal connected through a resistor to a gate terminal of the MOSFET, and a pinch-off voltage controller that controls a pinch-off voltage of the JFET to a first reference voltage at startup and to a second reference voltage, which is lower than the first reference voltage, after startup.

Claims (38)

1. A startup circuit comprising:

a MOSFET being connected between a startup power source and an auxiliary power source of a capacitance element and configured to pass a startup current of the startup power source to the capacitance element;

a JFET having a drain terminal connected to a drain terminal of the MOSFET and a source terminal connected through a resistor to a gate terminal of the MOSFET; and

a pinch-off voltage controller configured to control a pinch-off voltage of the JFET

to a first reference voltage at startup and

to a second reference voltage lower than the first reference voltage after the startup, wherein

the pinch-off voltage controller includes a variable voltage source and the variable voltage source is configured to:

(i) apply a first gate voltage to a gate terminal of the JFET to control the pinch-off voltage of the JFET to the first reference voltage if a voltage of the capacitance element is lower than a predetermined value; and

(ii) apply a second gate voltage being lower than the first gate voltage to the gate terminal of the JFET to control the pinch-off voltage of the JFET to the second reference voltage if the voltage of the capacitance element is equal to or higher than the predetermined value.

2. The startup circuit of claim 1 , wherein

the gate terminal of the JFET is a conductive layer formed on an insulating layer being formed on a semiconductor substrate.

3. A switching power source IC comprising:

the startup circuit according to claim 1 ; and

a control circuit configured to start to operate when the voltage of the capacitance element is equal to or higher than the predetermined value and control a switching element, wherein

the startup circuit and control circuit are arranged on the same semiconductor substrate.

4. A switching power source apparatus comprising:

a switching element;

the startup circuit according to claim 1 ; and

a control circuit configured to start to operate when the voltage of the capacitance element is equal to or higher than the predetermined value and control the switching element.

5. A startup circuit comprising:

a MOSFET being connected between a startup power source and an auxiliary power source of a capacitance element and configured to pass a startup current of the startup power source to the capacitance element;

a JFET having a drain terminal connected to a drain terminal of the MOSFET and a source terminal connected through a resistor to a gate terminal of the MOSFET; and

a pinch-off voltage controller configured to control a pinch-off voltage of the JFET

to a first reference voltage at startup and

to a second reference voltage lower than the first reference voltage after the startup, wherein:

the gate terminal of the JFET includes a first gate terminal and a second gate terminal being grounded; and

the pinch-off voltage controller is the first gate terminal of the JFET being connected to the gate terminal of the MOSFET.

6. The startup circuit of claim 5 , wherein

the first gate terminal is a conductive layer formed on an insulating layer being formed on a semiconductor substrate and

the second gate terminal is the semiconductor substrate.

7. A switching power source IC comprising:

the startup circuit according to claim 5 ; and

a control circuit configured to start to operate when the voltage of the capacitance element is equal to or higher than the predetermined value and control a switching element, wherein

the startup circuit and control circuit are arranged on the same semiconductor substrate.

8. A switching power source apparatus comprising:

a switching element;

the startup circuit according to claim 5 ; and

a control circuit configured to start to operate when the voltage of the capacitance element is equal to or higher than the predetermined value and control the switching element.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 19, 2011
From: KUBOTA, HIDEYUKI; KONDOU, SATOSHI
To: SANKEN ELECTRIC CO., LTD.
Reel/Frame 027410/0574 →
Priority Claims (1)
JP 2010-287671 · Dec 24, 2010 · national
Continuity (1)
Related Publication 20120163047A1 · Jun 28, 2012