Photoelectric conversion device
View Patent ↗It is an object of the present invention to provide a photoelectric conversion device having a passivation layer suitable for a structure provided with a heat dissipation mechanism. A photoelectric conversion device 1 of the present invention has a first electrode layer 20 , a single power generation laminate 22 having a nip structure formed of a-Si (amorphous silicon), and a second electrode layer 26 of Al formed on the power generation laminate 22 through a nickel layer 24 . On the second electrode layer 26 , a passivation layer 28 constructed of a material containing SiCN is formed. On the passivation layer 28 , a heat sink 30 (for example, formed of Al) is mounted through an adhesive layer 29.
1. A photoelectric conversion device comprising:
a first electrode layer;
a second electrode layer including Al;
one or a plurality of power generation laminates provided between the first and the second electrode layers, for converting an energy of incident light into an electric energy;
a heat dissipation portion including Al provided to the second electrode layer; and
a passivation layer provided between the heat dissipation portion and the second electrode layer in a portion brought into contact with the heat dissipation portion and the second electrode layer, and constructed of a material containing SiCN having a composition of Carbon added thereto in an amount of 2 at % to 10 at %.
2. The photoelectric conversion device as claimed in claim 1 , wherein:
the power generation laminate including a p-type semiconductor layer, an i-type semiconductor layer formed in contact with the p-type semiconductor layer, and an n-type semiconductor layer formed in contact with the i-type semiconductor layer.
3. The photoelectric conversion device as claimed in claim 2 , wherein the first electrode layer is a transparent electrode.
4. The photoelectric conversion device as claimed in claim 2 , wherein the i-type semiconductor layer of the power generation laminate is formed of any one of crystalline silicon, microcrystalline amorphous silicon, and amorphous silicon.
5. The photoelectric conversion device as claimed in claim 2 , wherein the first electrode layer has a portion which is brought into contact with the n-type semiconductor layer and which contains n-type ZnO, the n-type semiconductor layer brought into contact with the first electrode layer being formed of amorphous silicon.
6. The photoelectric conversion device as claimed in claim 2 , wherein the p-type semiconductor layer brought into contact with the second electrode layer is formed of amorphous silicon, the second electrode layer being provided with a layer containing nickel (Ni) at least in a portion brought into contact with the p-type semiconductor layer.
7. The photoelectric conversion device as claimed in claim 1 , wherein the heat dissipation portion is a heat sink constructed of a material containing Al.