Semiconductor device
A semiconductor device includes: a first semiconductor layer formed on a substrate and formed of a nitride-based semiconductor; a second semiconductor layer formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer; first and second electrodes formed on a surface of the second semiconductor layer; an inter-electrode insulator film that is formed between the first and second electrodes on the surface of the second semiconductor layer; and a dielectric constant adjustment layer formed on the inter-electrode insulator film and formed of an electric insulator. The first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and the dielectric constant adjustment layer has a first layer that contacts a lateral end portion of the field plate portion and a second layer formed on the first layer.
1. A semiconductor device, comprising:
a first semiconductor layer that is formed on a substrate and formed of a nitride-based semiconductor;
a second semiconductor layer that is formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer;
a first electrode that is formed on a surface of the second semiconductor layer;
a second electrode that is formed on the surface of the second semiconductor layer;
an inter-electrode insulator film that is formed between the first electrode and the second electrode on the surface of the second semiconductor layer; and
a dielectric constant adjustment layer that is formed on the inter-electrode insulator film and formed of an electric insulator, wherein
the first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and
the dielectric constant adjustment layer has a first dielectric constant adjustment layer that contacts a lateral end portion of the field plate portion and a second dielectric constant adjustment layer formed on the first dielectric constant adjustment layer,
wherein when a dielectric constant of the first dielectric constant adjustment layer is ∈ r 1 and a dielectric constant of the second dielectric constant adjustment layer is ∈ r 2:1.5<∈ r 2<9; and ∈ r 1≧∈ r 2.
2. The semiconductor device according to claim 1 , wherein a ratio of an electric charge of a carrier pulled out from the lateral end portion of the field plate portion of the first electrode through the inter-electrode insulator film and the first dielectric constant adjustment layer, to an electric charge of a carrier pulled out from a bottom surface of the first electrode is 65% or larger.
3. The semiconductor device according to claim 1 , wherein a dielectric constant ∈ r 1 of the first dielectric constant adjustment layer satisfies a relation of 3≦∈ r 1≦9.
4. The semiconductor device according to claim 1 , wherein the first dielectric constant adjustment layer includes at least one of SiO 2 , Si 3 N 4 , Al 2 O 3 , and MgO.
5. The semiconductor device according to claim 1 , wherein the first dielectric constant adjustment layer includes a polyimide film in which ceramic particles of at least one of TiO 2 , SiO 2 , Al 2 O 3 , HfO, ZrO, HfSi x O y , and ZrSi x O y are mixed.
6. The semiconductor device according to claim 1 , wherein the first dielectric constant adjustment layer includes a polymeric material including at least one metal of Cu, Ni, Ag, Al, Zn, Co, Fe, and Mn.
7. The semiconductor device according to claim 1 , wherein the first dielectric constant adjustment layer includes a silicone resin material.
8. The semiconductor device according to claim 1 , wherein the first dielectric constant adjustment layer includes a high-dielectric polymeric material.
9. The semiconductor device according to claim 1 , wherein the first electrode is an anode electrode, the second electrode is a cathode electrode, and the semiconductor device is a diode.
10. The semiconductor device according to claim 1 , wherein the first electrode is a gate electrode, the second electrode is a drain electrode, and the semiconductor device is a high electron mobility transistor.
11. A semiconductor device, comprising:
a first semiconductor layer that is formed on a substrate and formed of a nitride-based semiconductor;
a second semiconductor layer that is formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer;
a first electrode that is formed on a surface of the second semiconductor layer;
a second electrode that is formed on the surface of the second semiconductor layer;
an inter-electrode insulator film that is formed between the first electrode and the second electrode on the surface of the second semiconductor layer; and
a dielectric constant adjustment layer that is formed on the inter-electrode insulator film and formed of an electric insulator, wherein
the first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and
the dielectric constant adjustment layer has a first dielectric constant adjustment layer that contacts a lateral end portion of the field plate portion and a second dielectric constant adjustment layer formed on the first dielectric constant adjustment layer,
wherein a ratio of an electric charge of a carrier pulled out from the lateral end portion of the field plate portion of the first electrode through the inter-electrode insulator film and the first dielectric constant adjustment layer, to an electric charge of a carrier pulled out from a bottom surface of the first electrode is 65% or larger.
12. The semiconductor device according to claim 11 , wherein the first dielectric constant adjustment layer includes at least one of SiO 2 , Si 3 N 4 , Al 2 O 3 , and MgO.
13. The semiconductor device according to claim 11 , wherein the first dielectric constant adjustment layer includes a polyimide film in which ceramic particles of at least one of TiO 2 , SiO 2 , Al 2 O 3 , HfO, ZrO, HfSi x O y , and ZrSi x O y are mixed.
14. The semiconductor device according to claim 11 , wherein the first dielectric constant adjustment layer includes a polymeric material including at least one metal of Cu, Ni, Ag, Al, Zn, Co, Fe, and Mn.
15. A semiconductor device, comprising:
a first semiconductor layer that is formed on a substrate and formed of a nitride-based semiconductor;
a second semiconductor layer that is formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer;
a first electrode that is formed on a surface of the second semiconductor layer;
a second electrode that is formed on the surface of the second semiconductor layer;
an inter-electrode insulator film that is formed between the first electrode and the second electrode on the surface of the second semiconductor layer; and
a dielectric constant adjustment layer that is formed on the inter-electrode insulator film and formed of an electric insulator, wherein
the first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and
the dielectric constant adjustment layer has a first dielectric constant adjustment layer that contacts a lateral end portion of the field plate portion and a second dielectric constant adjustment layer formed on the first dielectric constant adjustment layer,
wherein the first dielectric constant adjustment layer includes a silicone resin material or a high-dielectric polymeric material.
16. The semiconductor device according to claim 15 , wherein the first dielectric constant adjustment layer includes a silicone resin material.
17. The semiconductor device according to claim 15 , wherein the first dielectric constant adjustment layer includes a high-dielectric polymeric material.