Semiconductor device having vertical type transistor
A semiconductor device includes: a first vertical type transistor having a first lower diffusion layer, a first upper diffusion layer, and a gate electrode; a second vertical type transistor having a second lower diffusion layer, a second upper diffusion layer, and a second gate electrode; a gate wiring connected to the first and second gate electrodes; a first wiring connected to the first lower diffusion layer and second upper diffusion layer; and a second wiring connected to the first upper diffusion layer and second lower diffusion layer.
1. A semiconductor device comprising:
a first vertical type transistor including:
a first semiconductor pillar vertically formed on an upper surface of a semiconductor substrate;
a first lower diffusion layer formed at a lower portion of or below the first semiconductor pillar;
a first upper diffusion layer formed at an upper portion of the first semiconductor pillar;
a first gate insulating film covering a side surface of the first semiconductor pillar; and
a first gate electrode covering the first gate insulating film;
a second vertical type transistor including:
a second semiconductor pillar vertically formed on the upper surface of the semiconductor substrate;
a second lower diffusion layer formed at a lower portion of or below the second semiconductor pillar;
a second upper diffusion layer formed at an upper portion of the second semiconductor pillar;
a second gate insulating film covering a side surface of the second semiconductor pillar; and
a second gate electrode covering the second gate insulating film;
a gate wiring electrically connected to the first and second gate electrodes;
a first wiring electrically connected to the first lower diffusion layer and second upper diffusion layer; and
a second wiring electrically connected to the first upper diffusion layer and second lower diffusion layer,
wherein:
the first and second vertical type transistors are electrically connected between first and second nodes,
a length of a wiring extending from the first node to the first lower diffusion layer is substantially equal to a length of a wiring extending from the second node to the second lower diffusion layer, and
a length of a wiring extending from the first node to the second upper diffusion layer is substantially equal to a length of a wiring extending from the second node to the first upper diffusion layer.
2. The semiconductor device as claimed in claim 1 , wherein the first and second vertical type transistors have substantially a same characteristics.
3. The semiconductor device as claimed in claim 1 , wherein the first and second vertical type transistors have a plane-symmetrical to each other with respect to a predetermine plane.
4. The semiconductor device as claimed in claim 1 , wherein the first and second vertical type transistors are adjacently arranged.
5. The semiconductor device as claimed in claim 1 , further comprising:
an interlayer insulating film covering the first and second vertical type transistors;
first and second contact plugs penetrating the interlayer insulating film and being electrically connected to the first and second lower diffusion layers, respectively; and
third and fourth contact plugs penetrating the interlayer insulating film and being electrically connected to the first and second upper diffusion layers, respectively, wherein the first and second wiring are formed on an upper surface of the interlayer insulating film, the first wiring is electrically connected to the first lower diffusion layer through the first contact plug and electrically connected to the second upper diffusion layer through the fourth contact plug, and the second wiring is electrically connected to the first upper diffusion layer through the third contact plug and electrically connected to the second lower diffusion layer through the second contact plug.
6. The semiconductor device as claimed in claim 5 , wherein the first wiring includes a first partial wiring having an end portion, a second partial wiring connected between the end portions of the first partial wiring and the first contact plug, and a third partial wiring connected between the end portions of the first partial wiring and the fourth contact plug, and the second wiring includes a fourth partial wiring having an end portion, a fifth partial wiring connected between the end portions of the fourth partial wiring and the third contact plug, and a sixth partial wiring connected between the end portions of the fourth partial wiring and the second contact plug.
7. The semiconductor device as claimed in claim 6 , wherein the second partial wiring and sixth partial wiring have substantially a same length, and the third partial wiring and fifth partial wiring have substantially a same length.
8. The semiconductor device as claimed in claim 1 , further comprising a bias switching circuit switching between a first mode in which voltage applied to the first wiring is higher than that applied to the second wiring and a second mode in which voltage applied to the second wiring is higher than that applied to the first wiring.
9. A semiconductor device comprising:
a first vertical type transistor including:
a first semiconductor pillar vertically formed on an upper surface of a semiconductor substrate;
a first lower diffusion layer formed at a lower portion of or below the first semiconductor pillar;
a first upper diffusion layer formed at an upper portion of the first semiconductor pillar;
a first gate insulating film covering a side surface of the first semiconductor pillar; and
a first gate electrode covering the first gate insulating film; and
a second vertical type transistor including:
a second semiconductor pillar vertically formed on the upper surface of the semiconductor substrate; a second lower diffusion layer formed at a lower portion of or below the second semiconductor pillar;
a second upper diffusion layer formed at an upper portion of the second semiconductor pillar;
a second gate insulating film covering a side surface of the second semiconductor pillar; and
a second gate electrode covering the second gate insulating film, wherein:
the first and second vertical type transistors are electrically connected in parallel between first and second nodes,
the first node is electrically connected to the first lower diffusion layer and second upper diffusion layer,
the second node is electrically connected to the first upper diffusion layer and second lower diffusion layer,
a length of a wiring extending from the first node to the first lower diffusion layer is substantially equal to a length of a wiring extending from the second node to the second lower diffusion layer, and
a length of a wiring extending from the first node to the second upper diffusion layer is substantially equal to a length of a wiring extending from the second node to the first upper diffusion layer.
10. The semiconductor device as claimed in claim 9 , wherein the first and second vertical type transistors have substantially a same characteristics.
11. The semiconductor device as claimed in claim 9 , further comprising a bias switching circuit switching between a first mode in which voltage applied to the first node is higher than that applied to the second node and a second mode in which voltage applied to the second node is higher than that applied to the first node.
12. A semiconductor device comprising:
a first vertical type transistor including:
a first semiconductor pillar vertically formed on an upper surface of a semiconductor substrate;
a first lower diffusion layer formed at a lower portion of or below the first semiconductor pillar;
a first upper diffusion layer formed at an upper portion of the first semiconductor pillar;
a first gate insulating film covering a side surface of the first semiconductor pillar; and a first gate electrode covering the first gate insulating film; and
a second vertical type transistor including:
a second semiconductor pillar vertically formed on the upper surface of the semiconductor substrate;
a second lower diffusion layer formed at a lower portion of or below the second semiconductor pillar;
a second upper diffusion layer formed at an upper portion of the second semiconductor pillar;
a second gate insulating film covering a side surface of the second semiconductor pillar; and
a second gate electrode covering the second gate insulating film,
wherein:
the first and second vertical type transistors are electrically connected in series between first and second nodes,
the first node is electrically connected to one of the first lower diffusion layer and the second upper diffusion layer,
the second node is electrically connected to the second lower diffusion layer when the first node is electrically connected to the first lower diffusion layer or electrically connected to the second upper diffusion layer when the first node is connected to the first upper diffusion layer,
a length of a wiring extending from the first node to the first lower diffusion layer is substantially equal to a length of a wiring extending from the second node to the second lower diffusion layer, and
a length of a wiring extending from the first node to the second upper diffusion layer is substantially equal to a length of a wiring extending from the second node to the first upper diffusion layer.
13. The semiconductor device as claimed in claim 12 , wherein the first and second vertical type transistors have substantially a same characteristics.
14. The semiconductor device as claimed in claim 12 , further comprising a bias switching circuit switching between a first mode in which voltage applied to the first node is higher than that applied to the second node and a second mode in which voltage applied to the second node is higher than that applied to the first node.