Semiconductor device and manufacturing method thereof
In one embodiment, a semiconductor device includes a chip stacked body disposed on an interposer substrate and an interface chip mounted on the chip stacked body. The chip stacked body has plural semiconductor chips, and is electrically connected via through electrodes provided in the semiconductor chips excluding a lowermost semiconductor chip in a stacking order of the plural semiconductor chips and bump electrodes. The interface chip is electrically connected to the interposer substrate via a rewiring layer formed on a surface of an uppermost semiconductor chip in the stacking order or through electrodes provided in the interface chip.
1. A semiconductor device, comprising:
an interposer substrate having a first surface provided with an external connection terminal and a second surface provided with an internal connection terminal;
a chip stacked body, disposed on the second surface of the interposer substrate, having plural semiconductor chips sequentially stacked, the plural semiconductor chips being electrically connected via through electrodes provided in the semiconductor chips excluding a lowermost semiconductor chip in a stacking order of the plural semiconductor chips and a first bump electrode connecting between the through electrodes, the lowermost semiconductor chip being electrically connected to the interposer substrate via at least one semiconductor chip having the through electrode, and an uppermost semiconductor chip in the stacking order having a rewiring layer provided on a surface thereof; and
an interface chip mounted on the uppermost semiconductor chip, electrically connected to the uppermost semiconductor chip via a second bump electrode, and electrically connected to the internal connection terminal via the rewiring layer.
2. The semiconductor device according to claim 1 ,
wherein the chip stacked body is disposed so that the lowermost semiconductor chip is positioned on the second surface side of the interposer substrate, and
wherein the interface chip is electrically connected to the internal connection terminal via a bonding wire connected to the rewiring layer.
3. The semiconductor device according to claim 2 ,
wherein the lowermost semiconductor chip is adhered to the second surface of the interposer substrate.
4. The semiconductor device according to claim 2 ,
wherein the chip stacked body is disposed on a chip mounting portion of a supporting substrate and the supporting substrate is adhered to the second surface of the interposer substrate, and
wherein the supporting substrate has a groove provided in a periphery of the chip mounting portion, a resin is filled into a gap between the semiconductor chips, and a portion of the resin protruded from the gap is held in the groove.
5. The semiconductor device according to claim 1 ,
wherein the chip stacked body is disposed so that the uppermost semiconductor chip is positioned on the second surface side of the interposer substrate, and
wherein the interface chip is electrically connected to the internal connection terminal via a third bump electrode which is connected to the rewiring layer and has a size larger than that of the second bump electrode.
6. The semiconductor device according to claim 5 ,
wherein the chip stacked body is disposed on a chip mounting portion of a supporting substrate and the supporting substrate is adhered to the second surface of the interposer substrate, and
wherein the supporting substrate has a groove provided in a periphery of the chip mounting portion, a resin is filled into a gap between the semiconductor chips, and a portion of the resin protruded from the gap is held in the groove.
7. The semiconductor device according to claim 1 ,
wherein the lowermost semiconductor chip has a thickness thicker than that of the other semiconductor chips.
8. The semiconductor device according to claim 1 ,
wherein the chip stacked body has a spacer disposed in a gap between the semiconductor chips.